Hydrogenated amorphous silicon p-i-n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 3, 2012, Pages 333-342

  Wank, Michael A ^a   Van Swaaij, Rene ^a   Van De Sanden, Richard ^b   Zeman, Miro ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

hydrogenated amorphous silicon; plasma deposition; pulse shaped biasing

Indexed keywords

DARK CONDUCTIVITY; DEPOSITED ENERGY; DUAL-BEAM; EXPANDING THERMAL PLASMA DEPOSITIONS; FILL FACTOR; INITIAL ENERGY; INTRINSIC LAYER; MOBILITY-LIFETIME PRODUCTS; PHOTORESPONSES; PULSE-SHAPED BIASING; QUANTUM EFFICIENCY MEASUREMENTS; SUBSTRATE BIASING; SUBSTRATE TEMPERATURE; URBACH ENERGY; VOID CONTENTS;

AMORPHOUS SILICON; CONVERSION EFFICIENCY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGENATION; ION BOMBARDMENT; OPEN CIRCUIT VOLTAGE; PHOTOCONDUCTIVITY; PLASMA DEPOSITION;

ATOMS;

EID: 84860015485     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1157     Document Type: Article

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