Thin-film solar cells: Device measurements and analysis

Progress in Photovoltaics: Research and Applications

Volumn 12, Issue 2-3, 2004, Pages 155-176

  Hegedus, Steven S ^a   Shafarman, William N ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

Admittance; Amorphous Si; CdTe; Cu(InGa)Se2; Quantum efficiency; Thin film

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC ADMITTANCE; ELECTRIC VARIABLES MEASUREMENT; PHOTOCURRENTS; QUANTUM EFFICIENCY; SEMICONDUCTING CADMIUM TELLURIDE; THIN FILMS;

ADMITTANCE MEASUREMENT; HIGH DENSITY OF DEFECT STATES; PARASITIC LOSSES; THIN FILM SOLAR CELLS; VOLTAGE-DEPENDENT PHOTOCURRENT COLLECTION;

SOLAR CELLS;

ANALYSIS; FILM; PHOTOVOLTAIC SYSTEM;

EID: 1842731047     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.518     Document Type: Article

References (55)

1. Emery K. Measurement and characterization of solar cells and modules. in Handbook of Photovoltaic Science and Engineering, Luque A, Hegedus S (eds). Wiley: Chichester, 2003; Chap. 16.
2. Dalal V, Rothwarf A. Comment on 'A simple measurement of absolute solar cell efficiency', Journal of Applied Physics 1979; 50: 2980-2981.
3. Yang J, Banarjee A, Glatfelter T, Sugiyama S, Guha, S. Recent progress in amorphous silicon alloy leading to 13% stable efficiency. Proceedings of the 26th IEEE Photovoltaic Specialists Conference 1997; 563-568.
4. Wu X, Dhere R, Yan, Y. High efficiency polycrystalline CdTe thin film solar cells with oxygenated amorphous CdS window layer. Proceedings of the 29th IEEE Photovoltaic Specialists Conference 2002, 531-534.
5. 2 solar cells with increasing bandgap. Journal of Applied Physics 1996; 79: 7324-7328.
6. Crandall R. Modelling of thin film solar cells: uniform field approximation. Journal of Applied Physics 1983; 54: 7176-7186.
7. Liu X, Sites, J. Solar-cell collection efficiency and its variation with voltage. Journal of Applied Physics 1994; 75: 577-581.
8. Phillips J, Roy M. Resistive and photoconductive effects in spectral response measurements. Proceedings of the 20th IEEE Photovoltaic Specialists Conference 1998, 1614-1616.
9. Sites J, Tavakolian H, Sasala R. Analysis of apparent quantum efficiency. Solar Cells 1990; 29: 39-48.
10. 2 solar cells. In Handbook of Photovoltaic Science and Engineering, Luque A, Hegedus S (eds). Wiley: Chichester UK, 2003; Chap. 13.
11. Fahrenbruch A, Bube R. Fundamentals of Solar Cells. Academic Press: New York, 1983; 231-234.
12. Misiakos K, Lindholm F. Analytial and numerical modelingof amorphous silicon pi-n solar cells. Journal of Applied Physics 1988; 64: 383-393.
13. Arya R, Catalano A, Oswald R. Amorphous silicon p-i-n solar cells with graded interface. Applied Physics Letters 1986; 49: 1089-1091.
14. Hegedus S. Current voltage analysis of a-Si and a-SiGe solar cells including voltage dependent photocurrent collection. Progress in Photovoltaics Research and Applications 1997; 5: 151-168.
15. Shafarman W, Zhu J. Material Research Society Symposium Proceedings 2001 2001; 668: H2.3.
16. Dalal V, Leonard M, Booker J, Vaseashta A, Hegedus S. Quantum efficiency of amorphous alloy solar cells. Proceedings of the 18th IEEE Photovoltaic Specialist Conference 1985; 837-841.
17. Rocheleau R, Hegedus S, Buchanan W, Tullman R. Effects of impurities on film quality and device performance in a-Si:H deposited by photo-assisted CVD. Proceedings of the 19th IEEE Photovoltaic Specialists Conference 1987; 699-704.
18. Banerjee A, Xu X, Yang J, Guha S. Carrier collection loses in amorphous silicon and amorphous silicon-germanium alloy solar cells. Applied Physics Letters 1995; 67: 2975-2977.
19. Fortmann C, Fischer D. Mobility, recombination kinetics, and solar cells performance. Proceedings of the 23rd IEEE Photovoltaic Specialists Conference 1993, 966-970.
20. Hegedus S, Buchanan W. Understanding graded a-SiGe solar cells using bifacial photocurrent collection. Proceedings of the 23rd IEEE Photovoltaic Specialists Conference 1993; 991-994.
21. Sudharsanan R, Rohatgi A. Investigation of metalorganic chemical vapor deposition grown CdTe/CdS solar cells. Solar Cells 1991; 31: 143-150.
22. Agostinelli G, Bätzner D, Dunlop E. Apparent quantum efficiency in CdTe solar cells. Proceedings of the 17th European Photovoltaic Solar Energy Conference 2001; 1254-1257.
23. Toyama T, Suzuki T, Gotoh M. Reduction of infrared response of CdS/CdTe thin-film solar cell with decreased thickness of photovoltaic active layer. Solar Energy Materials and Solar Cells 2001; 67: 41-47.
24. Phillips J. Determination of diffusion length from bi-facial spectral response. Proceedings of the 20th IEEE Photovoltaic Specialists Conference 1990; 782-786.
25. Crandall R, Sadlon, K, Kalina J, Delahoy A. Direct measurement of mobility-lifetime product of holes an electrons in an amorphous silicon p-i-n cell. Material Research Society Symposium Proceedings 1989; 149: 423-427.
26. Hegedus S, Lin H, Moore A. Light induced degradation in amorphous silicon studied by surface photovoltage technique: a comparison of lifetime vs. space charge effects. Journal of Applied Physics 1988; 64: 1215-1219.
27. Chatterjee P, McElhenry P, Fonash S. Influence of illumination conditions on the spectral response of amorphous silicon Schottky barrier structures. Journal of Applied Physics 1990; 67: 3803-3809.
28. Hegedus S, Kaplan R. Analysis of quantum efficiency and optical enhancement in amorphous Si p-i-n solar cells. Progress in Photovoltaics Research in Applications 2002; 10: 257-269.
29. Lechner P. Geyer R, Schade H. Detailed according for quantum efficiency and optical losses in a-Si:H based solar cells. Proceedings of the 28th IEEE Photovoltaic Specialists Conference 2000; 861.
30. Phillips J, Birkmire R, McCandless B. Polycrystalline heterojunction solar cells. Physica Status Solidi (b) 1996; 194:31.
31. Sah C, Noyce R, Shockley W. Carrier generation and recombination in P-N junctions and P-N junction characteristics. Proceedings of the Institution of Radio Engineers 1957; 45: 1228.
32. 2 solar cells. Proceedings of the 12th European Photovoltaic Solar Energy Conference 1994; 1755-1758.
33. 2 heterojunction solar cells. Applied Physics Letters 1999; 74: 111.
34. Swartz G. Computer model of amorphous silicon solar cell. Journal of Applied Physics 1982; 53: 712.
35. Sites J, Mauk P. Diode quality factor determination for Solar Cells. Solar Cells 1987; 27: 411.
36. 2 Cd(Zn)S. Applied Physics Letters 1984; 44: 131.
37. 2 solar cells. Proceedings of the 26th IEEE Photovoltaic Specialists Conference 1997; 463.
38. 2/CdS Heterojunctions. Proceedings of the 28th IEEE Photovoltaic Specialists Conference 1988, 1618.
39. Lyakas M, Zaharia R, Eizenberg M. Analysis of nonideal Schottky and p-n junction diodes - extraction of parameters from I-V plots. Journal of Applied Physics 1995; 78: 5481.
40. Meier M, Schroder D. Contact resistance: its measurement and relative importance to power loss in a solar cell. IEEE Transactions on Electron Devices 1984; ED-31: 647.
41. Schade H, Smith Z. Contact resistance measurements for hydrogenated amorphous silicon solar cell structures. Journal of Applied Physics 1986; 59: 1682.
42. 2/p and ZnO/p contact resistance and junction properties in a-Si p-i-n solar cells and modules. Proceedings of the 28th IEEE Photovoltaic Specialists Conference 2000; 728.
43. 2 contact on operating solar cells. Proceedings of the 25th IEEE Photovoltaic Specialists Conference 1996; 917.
44. 2 solar cells. Solar Energy Materials and Solar Cells 1998; 53: 367.
45. Losee D. Admittance spectroscopy of impurity levels in Schottky barriers. Journal of Applied Physics 1975; 46: 2204-2214.
46. Snell A, Mackenzie K, Le Comber P, Spear W. The interpretation of capacitance and conductance measurements on metal-amorphous silicon barriers. Philosophical Magazine B 1979; 40: 1-15.
47. Viktorovitch P, Moddel G. Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes. Journal of Applied Physics 1980; 51: 4847-4854.
48. Scofield J. Effects of series resistance and inductance on solar cell admittance measurements. Solar Energy Materials and Solar Cells 1995; 37: 217-226.
49. Michelson C, Gelatos A, Cohen J. Drive-level capacitance profiling: its application to determining gap state densities in hydrogenated silicon films. Applied Physics Letters 1985; 47: 412-414.
50. Eron M. Steady-state and transient capacitance of a p-n junction in the presence of high density of deep levels. Journal of Applied Physics 1985; 58: 1064-1066.
51. Mauk P, Tavakolian H, Sites J. Interpretation of thin-film polycrystalline solar cell capacitance. IEEE Transactions on Electron Devices 1990; 37: 422-427.
52. 2 based heterojunctions. Journal of Applied Physics 1996; 80: 4411-4420.
53. Hegedus S, Fagen E. Midgap states in a-Si:H and a-SiGe:H p-i-n solar cells and Schottky junctions by capacitance techniques. Journal of Applied Physics 1992; 71: 5941-5951.
54. Gilmore A, Kaydanov V, Ohno T. Treatment effects on deep levels in CdTe based solar cells. Proceedings of the 29th IEEE Photovoltaic Specialists Conference 2002; 604-607.
55. Heath J, Cohen D, Shafarman W. Distinguishing metastable changes in bulk CIGS defect densities from interface effects. Thin Solids Films 2003; 431-432: 426.