Surface recombination of crystalline silicon substrates passivated by atomic-layer-deposited AlO x

Japanese Journal of Applied Physics

Volumn 51, Issue 4 PART 2, 2012, Pages

  Arafune, Koji ^a,d   Miki, Shohei ^a,d   Matsutani, Ryosuke ^a,d   Hamano, Junpei ^a,d   Yoshida, Haruhiko ^a,d   Tachibana, Tomihisa ^b,d   Ju Lee, Hyun ^b,d   Ogura, Atsuhi ^b,d   Ohshita, Yoshio ^c,d   Satoh, Shin Ichi ^a,d  

^a UNIVERSITY OF HYOGO   (Japan)

^b MEIJI UNIVERSITY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CRYSTALLINE SILICON SUBSTRATES; CRYSTALLINE SILICONS; DEPOSITION TEMPERATURES; LAYER THICKNESS; P-TYPE; PASSIVATION LAYER; POST DEPOSITION ANNEALING; RECOMBINATION VELOCITY; ROOM TEMPERATURE; SURFACE RECOMBINATIONS;

ATOMIC LAYER DEPOSITION; OZONE;

PASSIVATION;

EID: 84860369514     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.04DP06     Document Type: Article

References (26)

1. A. G. Aberle: Prog. Photovoltaics 8 (2000) 473.
2. J. H. Zhao, A. H. Wang, M. A. Green, and F. Ferrazza: Appl. Phys. Lett. 73 (1998) 1991.
3. M. Taguchi, K. Kawamoto, S. Tsuge, T. Baba, H. Sakata, M. Morizane, K. Uchihashi, N. Nakamura, S. Kiyama, and O. Oota: Prog. Photovoltaics 8 (2000) 503.
4. M. Schaper, J. Schmidt, H. Plagwitz, and R. Brendel: Prog. Photovoltaics 13 (2005) 381.
5. M. Garin, U. Rau, W. Brendle, I. Martin, and R. Alcubilla: J. Appl. Phys. 98 (2005) 093711.
6. S. Olibet, E. Vallat-Sauvain, and C. Ballif: Phys. Rev. B 76 (2007) 035326.
7. R. Hezel and K. Jaeger: J. Electrochem. Soc. 136 (1989) 518.
8. B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels: Appl. Phys. Lett. 89 (2006) 042112.
9. G. Agostinelli, A. Delabie, P. Vitanov, Z. Alexieva, H. F. W. Dekkers, S. De Wolf, and G. Beaucarne: Sol. Energy Mater. Sol. Cells 90 (2006) 3438.
10. S. Y. No, D. Eom, C. S. Hwang, and H. J. Kim: J. Electrochem. Soc. 153 (2006) F87.
11. B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M. van de Sanden, and W. M. M. Kessels: Appl. Phys. Lett. 91 (2007) 112107.
12. B. Hoex, J. Schmidt, P. Pohl, M. C. M. van de Sanden, and W. M. M. Kessels: J. Appl. Phys. 104 (2008) 044903.
13. J. Schmidt, A. Merkle, R. Brendel, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels: Prog. Photovoltaics 16 (2008) 461.
14. J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. Glunz: Appl. Phys. Lett. 92 (2008) 253504.
15. P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu: Appl. Phys. Lett. 95 (2009) 151502.
16. S. Miyajima, J. Irikawa, A. Yamada, and M. Konagai: Appl. Phys. Express 3 (2010) 012301.
17. J. Irikawa, S. Miyajima, S. Kida, T. Watahiki, and M. Konagai: Jpn. J. Appl. Phys. 50 (2011) 012301.
18. T.-T. Li and A. Cuevas: Physica Status Solidi: Rapid Res. Lett. 3 (2009) 160.
19. J. J. H. Gielis, B. Hoex, M. C. M. van de Sanden, and W. M. M. Kessels: J. Appl. Phys. 104 (2008) 073701.
20. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels: J. Appl. Phys. 104 (2008) 113703.
21. R. Ferre, I. Martín, M. Vetter, M. Garín, and R. Alcubilla: Appl. Phys. Lett. 87 (2005) 202109.
22. S. D. Wolf and G. Beaucarne: Appl. Phys. Lett. 88 (2006) 022104.
23. A. Rothschild, B. Vermang, X. Loozen, B. J. O'Sullivan, J. John, and J. Poortmans: Proc. 25th European Photovoltaic Solar Energy Conf. Exhib., 2010, p. 1382.
24. A. G. Aberle, S. Glunz, and W. Warta: J. Appl. Phys. 71 (1992) 4422.
25. A. R. Chowdhuri, C. G. Takoudis, R. F. Klie, and N. D. Browning: Appl. Phys. Lett. 80 (2002) 4241.
26. R. Kuse, M. Kundu, T. Yasuda, N. Miyata, and A. Toriumi: J. Appl. Phys. 94 (2003) 6411.