GHz high-Q lateral overmoded bulk acoustic-wave resonators using epitaxial sic thin film

Journal of Microelectromechanical Systems

Volumn 21, Issue 2, 2012, Pages 253-255

  Gong, Songbin ^a   Kuo, Nai Kuei ^a   Piazza, Gianluca ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Aluminum nitride (AlN); microelectromechanical systems (MEMS); piezoelectricity; resonators; SiC

Indexed keywords

ACOUSTIC CAVITIES; ALN; EPITAXIAL SILICON CARBIDE; HARSH ENVIRONMENT; HIGH QUALITY FACTORS; HIGH TEMPERATURE; INTRINSIC LOSS; LONGITUDINAL VIBRATIONS; OVERMODED; RADIO FREQUENCIES; RADIO FREQUENCY MICROELECTROMECHANICAL SYSTEMS; RESONANT DEVICE; SERIES RESONANCE; SIC; SIC THIN FILMS; SUSTAINING OPERATIONS; TRANSDUCTION EFFICIENCY; TWO-MATERIALS;

ACOUSTIC FIELDS; ACOUSTIC IMPEDANCE; ACOUSTIC RESONATORS; ALUMINUM NITRIDE; CRYSTALLOGRAPHY; ELECTROMECHANICAL DEVICES; EPITAXIAL GROWTH; HIGH TEMPERATURE APPLICATIONS; MEMS; PIEZOELECTRICITY; RESONATORS; TRANSDUCERS;

SILICON CARBIDE;

EID: 84859705760     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2011.2179017     Document Type: Article

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