Synthesis, characterization, photoluminescence and field emission properties of novel durian-like gallium nitride microstructures

Materials Chemistry and Physics

Volumn 133, Issue 2-3, 2012, Pages 793-798

  Nabi, Ghulam ^a   Cao, Chuanbao ^a   Khan, Waheed S ^a   Hussain, Sajad ^a   Usman, Zahid ^a   Mahmood, Tariq ^a   Khattak, Noor Abass Din ^b   Zhao, Suling ^c   Xin, Xu ^c   Yu, Dapeng ^d   Fu, Xuewen ^d  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b GOMAL UNIVERSITY   (Pakistan)

^c BEIJING JIAOTONG UNIVERSITY   (China)

^d PEKING UNIVERSITY   (China)

Author keywords

CVD method; Field emission; Optical properties; Semiconductor

Indexed keywords

CHEMICAL VAPOR DEPOSITION METHODS; CVD METHOD; EDX ANALYSIS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; FIELD EMISSION PROPERTY; GA METAL; LIGHT EMITTING DEVICES; LOW TEMPERATURES; MICRO-ELECTRONIC DEVICES; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE PROPERTIES; POTENTIAL APPLICATIONS; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPIES (SEM); SI SUBSTRATES; SINGLE PHASE; THRESHOLD FIELDS; TURN-ON FIELD; XRD; YELLOW BANDS;

CHEMICAL VAPOR DEPOSITION; CHEMICALS REMOVAL (WATER TREATMENT); FIELD EMISSION; GALLIUM ALLOYS; LASER RADIATION; MICROSTRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; VACUUM APPLICATIONS; X RAY DIFFRACTION; X RAY SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 84859434944     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.01.095     Document Type: Article

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