Synthesis, optical properties and growth mechanism of leaf-like GaN crystal

Journal of Crystal Growth

Volumn 291, Issue 2, 2006, Pages 491-496

  Qiu, Hailin ^a   Cao, Chuanbao ^a   Li, Jie ^a   Ji, Fengqiu ^a   Zhu, Hesun ^a  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

Author keywords

A1. Chemical vapor deposition; A1. Crystal morphology; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ALUMINA; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SUBSTRATES; SYNTHESIS (CHEMICAL);

ALUMINA SUBSTRATE; CRYSTAL ASSEMBLIES; CRYSTAL MORPHOLOGY; NEAR BAND EDGE EMISSION; SEMICONDUCTING III-V MATERIALS; THERMAL CHEMICAL VAPOR DEPOSITION METHOD;

GALLIUM NITRIDE;

EID: 33646901549     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.03.031     Document Type: Article

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