Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD

Journal of Crystal Growth

Volumn 309, Issue 1, 2007, Pages 8-11

  Feng, Z H ^a   Liu, B ^a   Yuan, F P ^a   Yin, J Y ^a   Liang, D ^a   Li, X B ^a   Feng, Z ^a   Yang, K W ^a   Cai, S J ^a  

^a HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

Author keywords

A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

GROWTH (MATERIALS); IRON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

CRYSTALLINE QUALITY; OPTICAL MONITORING; X-RAY ROCKING CURVES;

GALLIUM NITRIDE;

EID: 35549013728     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.08.032     Document Type: Article

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