Improved thermal stability of GaN blue laser diode by Ti/Pt/Au, W/Au and Cu bonding layers

Thin Solid Films

Volumn 516, Issue 6, 2008, Pages 1093-1096

  Jang, T ^a   Kwak, J S ^b   Sung, Y J ^a   Choi, K K ^a   Nam, O H ^a   Park, Y ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sunchon National University   (South Korea)

Author keywords

Bonding metal; GaN; Laser diode; Ohmic contact; Reliability; Thermal stability

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; OHMIC CONTACTS; ROBUST CONTROL; SEMICONDUCTOR LASERS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURES; BONDING LAYERS; BONDING METALS;

GALLIUM NITRIDE;

EID: 37349051478     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.04.163     Document Type: Article

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