Texture of NiSi films on Si(001), (111), and (110) substrates

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Detavernier, C ^a   Jordan Sweet, J ^b   Lavoie, C ^b  

^a GHENT UNIVERSITY   (Belgium)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; FIBER OPTICS; MOLECULAR BEAM EPITAXY; NICKEL; POLES; SOLID STATE REACTIONS; SUBSTRATES; TEXTURES;

(111) TEXTURE; AMERICAN INSTITUTE OF PHYSICS (AIP); AXIOTAXY; BOUNDARY STRUCTURES; FIBER TEXTURES; INTENSITY VARIATIONS; INTERFACE STRUCTURES; NISI FILMS; POLE FIGURES; POLY CRYSTALLINE; SI(0 0 1); SI(110); SOLID STATES; TEXTURE COMPONENTS;

SILICON;

EID: 45149114550     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937183     Document Type: Article

References (22)

1. U. F. Kocks, C. N. Tome, and H. -R. Wenk, Texture and Anisotropy: Preferred Orientations in Polycrystals and their Effect on Materials Properties (Cambridge University Press, Cambridge, UK, 1976).
2. V. Randle and O. Engler, Introduction to Texture Analysis (CRC Press, London, UK, 2000).
3. H. J. Bunge, Texture Analysis in Materials Science-Mathematical Methods, 2nd ed. (Butterworths, London, 1982).
4. V. Nokinov, Grain Growth and Control of Microstructure and Texture in Polycrystalline Materials (CRC, Boca Raton, FL, 1997).
5. C. E. Murray and K. P. Rodbell, J. Appl. Phys. 89, 2037 (2001). 0021-8979
6. C. V. Thompson and R. Carel, Mater. Sci. Eng., B MSBTEK 0921-5107 10.1016/0921-5107(94)01203-2 B32, 217 (1995).
7. J. M. E. Harper and K. P. Rodbell, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.589407 15, 763 (1997).
8. C. W. T. Bulle-Lieuwma, A. H. van Ommen, J. Hornstra, and C. N. A. M. Aussems, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.351119 71, 2211 (1992).
9. A. S. Özcan, K. F. Ludwig, Jr., P. Rebbi, C. Lavoie, C. Cabral, Jr., and J. M. E. Harper, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1509849 92, 5011 (2002).
10. C. Detavernier, A. S. Özcan, J. Jordan-Sweet, E. A. Stach, J. Tersoff, F. M. Ross, and C. Lavoie, Nature (London) NATUAS 0028-0836 10.1038/nature02198 426, 641 (2003).
11. C. Detavernier and C. Lavoie, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1719276 84, 3549 (2004).
12. A. Alberti, C. Bongiorno, B. Cafra, G. Mannino, E. Rimini, T. Metzger, C. Mocuta, T. Kammler, and T. Feudel, Acta Crystallogr., Sect. B: Struct. Sci. ASBSDK 0108-7681 10.1107/S0108768105022585 B61, 486 (2005).
13. A. Alberti, C. Bongiorno, E. Rimini, and M. G. Grimaldi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2338019 89, 102105 (2006).
14. A. Alberti, C. Spinella, A. La Magna, and E. Rimini, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2437058 90, 053507 (2007).
15. K. De Keyser, C. Detavernier, and R. L. Van Meirhaeghe, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2716362 90, 121920 (2007).
16. C. Detavernier, C. Lavoie, J. Jordan-Sweet, and A. S. Özcan, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.174106 69, 174106 (2004).
17. Joint Committee on Powder Diffaction Standards (J.C.P.D.S.) 73-1843.
18. C. Detavernier, C. Lavoie, and F. M. d'Heurle, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1545156 93, 2510 (2003).
19. M. Kh. Rabadanov and M. B. Ataev, Inorg. Mater. INOMAF 0020-1685 10.1023/A:1014056825562 38, 120 (2002).
20. D. F. Wilson and O. B. Cavin, Scr. Metall. Mater. SCRMEX 0956-716X 10.1016/0956-716X(92)90374-N 26, 85 (1992).
21. C. Detavernier and C. Lavoie, Metall. Mater. Trans. A MMTAEB 1073-5623 10.1007/BF02719729 37A, 851 (2006).
22. A NiSi grain can be oriented with the NiSi(211) pole at (=45°, φ=135°), i.e., parallel to Si(011), and its NiSi (-1,0,3) pole at ≈41°, φ=315°, i.e., slightly tilted with respect to Si (0,-1,1). Moreover, this grain [which has its NiSi(114) plane parallel to the interface] has the NiSi(241) pole at (=55°, φ=180°), i.e., parallel to the Si(-4,4,4) plane, resulting in only a 0.4% difference in interplanar spacing for these planes. As a consequence, the interface of this B001 -type grain is periodic along the Si[010] and Si [-110] directions.