Combined synchrotron x-ray diffraction and wafer curvature measurements during Ni-Si reactive film formation

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Rivero, C ^a   Gergaud, P ^a   Gailhanou, M ^a   Thomas, O ^a   Froment, B ^b   Jaouen, H ^b   Carron, V ^c  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SATURATION; FILM FORMATION; TRANSITION METAL SILICIDES; WAFER CURVATURE MEASUREMENT;

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; NICKEL; SILICON; SYNCHROTRONS; X RAY DIFFRACTION ANALYSIS;

THIN FILMS;

EID: 23744479414     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1999021     Document Type: Article

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