Anisotropy of the thermal expansion of the Ni(Si1-xGe x) phases investigated by high-temperature x-ray diffraction

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Perrin, C ^a   Nemouchi, F ^a   Clugnet, G ^a   Mangelinck, D ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; GERMANIUM; HIGH TEMPERATURE EFFECTS; MOS DEVICES; THERMAL EXPANSION; TRANSISTORS; X RAY DIFFRACTION;

MICROELECTRONIC DEVICES;

NICKEL COMPOUNDS;

EID: 34247276609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713992     Document Type: Article

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