|
Volumn 11, Issue 9, 2008, Pages
|
Epitaxial formation of a metastable hexagonal nickel-silicide
|
Author keywords
[No Author keywords available]
|
Indexed keywords
EPITAXIAL GROWTH;
EPITAXIAL LAYERS;
METASTABLE PHASES;
MIXING;
MOLECULAR BEAM EPITAXY;
NICKEL;
NICKEL ALLOYS;
NICKEL COMPOUNDS;
PHASE DIAGRAMS;
PHASE INTERFACES;
PHASE STABILITY;
SILICON;
SPUTTERING;
CO DEPOSITED LAYERS;
CODEPOSITED;
DEPOSITED FILMS;
ELECTROCHEMICAL SOCIETY (ECS);
EPITAXIAL FORMATION;
METASTABLE PHASE;
MIXING LAYERS;
NICKEL SILICIDE (NISI);
ROOM-TEMPERATURE (RT);
SI (111);
SI(1 0 0 );
SI(2 1 1) SUBSTRATES;
SEMICONDUCTING SILICON COMPOUNDS;
|
EID: 48249108309
PISSN: 10990062
EISSN: None
Source Type: Journal
DOI: 10.1149/1.2955580 Document Type: Article |
Times cited : (41)
|
References (13)
|