Self-passivated copper gates for amorphous silicon thin-film transistors

IEEE Electron Device Letters

Volumn 18, Issue 8, 1997, Pages 388-390

  Sirringhaus, H ^a   Theiss, S D ^a   Kahn, A ^a   Wagner, S ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COPPER ALLOYS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENCAPSULATION; GATES (TRANSISTOR); LIQUID CRYSTAL DISPLAYS; METALLIZING; SUBSTRATES; THERMAL STRESS;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS (AMLCD); SELF PASSIVATED COPPER GATES; THERMAL BIAS STRESS TESTING;

THIN FILM TRANSISTORS;

EID: 0031212637     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.605448     Document Type: Article

References (10)

1. W. E. Howard, J. Soc. Inform. Display, vol. 3, no. 3, p. 127, 1995.
2. P. M. Fryer, E. C. Colgan, E. Galligan, W. Graham, R. Horton, D. Hunt, K. Latzko, R. Nywening, L. Jenkins, R. John, P. Koke, Y. Kuo, F. Libsch, A. Lien, I. Lovas, R. Polastre, M. E. Rothwell, J. Souk, J. Wilson, R. Wisnieff, and S. Wright, in 1996 SID Int. Symp., Dig. Tech. Papers, 1996, p. 333.
3. J. Li and J. W. Mayer, Mater. Res. Soc. Bull., vol. XVIII, p. 52, June 1993; for an overview of Cu metallization in ULSI, see Mater. Res. Soc. Bull., vol. XIX, Aug. 1994.
4. J. Li and J. W. Mayer, Mater. Res. Soc. Bull., vol. XVIII, p. 52, June 1993; for an overview of Cu metallization in ULSI, see Mater. Res. Soc. Bull., vol. XIX, Aug. 1994.
5. M. J. Powell, IEEE Trans. Electron Devices, vol. 36, p. 2753, 1989.
6. S. D. Theiss and S. Wagner, IEEE Electron Device Lett., vol. 17, p. 578, 1996.
7. H. Sirringhaus, S. D. Theiss, A. Kahn, and S. Wagner, Presentation at the 1997 Spring Meeting of the Materials Research Society, April 1, 1997, pp. 31.3-4.4, San Francisco, CA.
8. H. Sirringhaus, A. Kahn, and S. Wagner, in Proc. IS&T/SPIE's 9th Ann. Symp. Electron. Imaging EI'97, Int. Soc. Opt. Eng., Bellingham, WA, vol. 3014, 1997, p. 62.
9. DARPA-EPRI Industry-University TFT Test Protocol.
10. M. J. Powell, C. van Berkel, and J. R. Hughes, Appl. Phys. Lett., vol. 54, p. 1323, 1989.