Ti/Cu bilayer electrodes for SiNx -passivated Hf-In-Zn-O thin film transistors: Device performance and contact resistance

Applied Physics Letters

Volumn 97, Issue 16, 2010, Pages

  Park, Joon Seok ^a   Kim, Tae Sang ^a   Son, Kyoung Seok ^a   Lee, Eunha ^a   Jung, Ji Sim ^b   Lee, Kwang Hee ^a   Maeng, Wan Joo ^a   Kim, Hyun Suk ^a   Kim, Eok Su ^a   Park, Kyung Bae ^a   Kwon, Jang Yeon ^b   Ryu, Myung Kwan ^a   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; BI-LAYER; DEPLETION MODES; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; ELECTRICAL PROPERTY; ENHANCEMENT MODES; FIELD-EFFECT MOBILITIES; SOURCE/DRAIN ELECTRODES; SUBTHRESHOLD SWING;

CONTACT RESISTANCE; ELECTRIC PROPERTIES; HAFNIUM; PASSIVATION; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

ELECTRODES;

EID: 77958504777     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3505151     Document Type: Article

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