-
2
-
-
0021608396
-
x/si strained layer heterostructures
-
DOI 10.1063/1.95074
-
R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Strmer, K. W. Wecht, R. Lynch, and K. Baldwin, Appl. Phys. Lett. 45, 1231 (1984). 10.1063/1.95074 (Pubitemid 15477231)
-
(1984)
Applied Physics Letters
, vol.45
, Issue.11
, pp. 1231-1233
-
-
People, R.1
Bean, J.C.2
Lang, D.V.3
Sergent, A.M.4
Stoermer, H.L.5
Wecht, K.W.6
Lynch, R.T.7
Baldwin, K.8
-
5
-
-
36149051072
-
-
10.1088/0950-7671/41/7/301
-
G. R. Higson, J. Sci. Instrum. 41, 405 (1964). 10.1088/0950-7671/41/7/301
-
(1964)
J. Sci. Instrum.
, vol.41
, pp. 405
-
-
Higson, G.R.1
-
6
-
-
0032136371
-
-
10.1109/5.704268
-
M. Esashi, S. Sugiyama, K. Ikeda, Y. Wang, and H. Miyashita, Proc. IEEE 86, 1627 (1998). 10.1109/5.704268
-
(1998)
Proc. IEEE
, vol.86
, pp. 1627
-
-
Esashi, M.1
Sugiyama, S.2
Ikeda, K.3
Wang, Y.4
Miyashita, H.5
-
10
-
-
50149109015
-
-
in (Institute of Electrical and Electronics Engineers, New York).
-
K. Reck, J. Richter, O. Hansen, and E. V. Thomsen, in MEMS 2008. IEEE 21st International Conference on Micro Electro Mechanical Systems (Institute of Electrical and Electronics Engineers, New York, 2008) p. 717.
-
(2008)
MEMS 2008. IEEE 21st International Conference on Micro Electro Mechanical Systems
, pp. 717
-
-
Reck, K.1
Richter, J.2
Hansen, O.3
Thomsen, E.V.4
-
12
-
-
17444414585
-
Electron mobility model for strained-Si devices
-
DOI 10.1109/TED.2005.844788
-
S. Dhar, H. Kosina, V. Palankovski, S. E. Ungersboeck, and S. Selberherr, IEEE Transactions on Electron Devices 52, 527 (2005). 10.1109/TED.2005.844788 (Pubitemid 40535878)
-
(2005)
IEEE Transactions on Electron Devices
, vol.52
, Issue.4
, pp. 527-533
-
-
Dhar, S.1
Kosina, H.2
Palankovski, V.3
Ungersboeck, S.E.4
Selberherr, S.5
-
13
-
-
0000741169
-
-
10.1063/1.362953
-
S. Takagi, J. L. Hoyt, J. J. Welser, and J. F. Gibbons, J. Appl. Phys. 80, 1567 (1996). 10.1063/1.362953
-
(1996)
J. Appl. Phys.
, vol.80
, pp. 1567
-
-
Takagi, S.1
Hoyt, J.L.2
Welser, J.J.3
Gibbons, J.F.4
-
14
-
-
8344236776
-
-
10.1109/TED.2004.836648
-
S. E. Thompson, M. Armstrong, C. Auth, A. Mohsen, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shifen, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004). 10.1109/TED.2004.836648
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 1790
-
-
Thompson, S.E.1
Armstrong, M.2
Auth, C.3
Mohsen, A.4
Buehler, M.5
Chau, R.6
Cea, S.7
Ghani, T.8
Glass, G.9
Hoffman, T.10
Jan, C.H.11
Kenyon, C.12
Klaus, J.13
Kuhn, K.14
Ma, Z.15
McIntyre, B.16
Mistry, K.17
Murthy, A.18
Obradovic, B.19
Nagisetty, R.20
Nguyen, P.21
Sivakumar, S.22
Shaheed, R.23
Shifen, L.24
Tufts, B.25
Tyagi, S.26
Bohr, M.27
El-Mansy, Y.28
more..
-
15
-
-
0003872707
-
-
(National Defense Industry Press, Beijing)
-
E. K. Liu, B. S. Zhu, and J. S. Luo, Semiconductor Physics (National Defense Industry Press, Beijing, 1994), pp. 400-408.
-
(1994)
Semiconductor Physics
, pp. 400-408
-
-
Liu, E.K.1
Zhu, B.S.2
Luo, J.S.3
-
16
-
-
33749233534
-
Measurements of the atomistic mechanics of single crystalline silicon wires of nanometer width
-
DOI 10.1103/PhysRevB.72.035333, 035333
-
T. Kizuka, Y. Takatani, K. Asaka, and R. Yoshizaki, Phys. Rev. B 72, 035333 (2005). 10.1103/PhysRevB.72.035333 (Pubitemid 41509290)
-
(2005)
Physical Review B - Condensed Matter and Materials Physics
, vol.72
, Issue.3
, pp. 1-6
-
-
Kizuka, T.1
Takatani, Y.2
Asaka, K.3
Yoshizaki, R.4
-
19
-
-
55749108519
-
-
10.1002/adma.200800485
-
C. L. Hsin, W. Mai, Y. D. Gu, Y. F. Gao, C. T. Huang, Y. Z. Liu, L. J. Chen, and Z. L. Wang, Adv. Mater. 20, 3919 (2008). 10.1002/adma.200800485
-
(2008)
Adv. Mater.
, vol.20
, pp. 3919
-
-
Hsin, C.L.1
Mai, W.2
Gu, Y.D.3
Gao, Y.F.4
Huang, C.T.5
Liu, Y.Z.6
Chen, L.J.7
Wang, Z.L.8
-
20
-
-
44449116274
-
In situ probing electrical response on bending of ZnO nanowires inside transmission electron microscope
-
DOI 10.1063/1.2936080
-
K. H. Liu, P. Gao, Z. Xu, X. D. Bai, and E. G. Wang, Appl. Phys. Lett. 92, 213105 (2008). 10.1063/1.2936080 (Pubitemid 351770367)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.21
, pp. 213105
-
-
Liu, K.H.1
Gao, P.2
Xu, Z.3
Bai, X.D.4
Wang, E.G.5
-
21
-
-
56849124601
-
-
10.1021/nn800283u
-
J. C. She, Z. M. Xiao, Y. H. Hua, S. Z. Deng, J. Chen, G. W. Yang, and N. S. Xu, ACS Nano, 2, 2015 (2008). 10.1021/nn800283u
-
(2008)
ACS Nano
, vol.2
, pp. 2015
-
-
She, J.C.1
Xiao, Z.M.2
Hua, Y.H.3
Deng, S.Z.4
Chen, J.5
Yang, G.W.6
Xu, N.S.7
-
22
-
-
84859327933
-
-
0 are the resistivity under strain and without strain, respectively.
-
0 are the resistivity under strain and without strain, respectively.
-
-
-
-
24
-
-
0037459371
-
Small-diameter silicon nanowire surfaces
-
DOI 10.1126/science.1080313
-
D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, Science 299, 1874 (2003). 10.1126/science.1080313 (Pubitemid 36356653)
-
(2003)
Science
, vol.299
, Issue.5614
, pp. 1874-1877
-
-
Ma, D.D.D.1
Lee, C.S.2
Au, F.C.K.3
Tong, S.Y.4
Lee, S.T.5
-
25
-
-
0000221818
-
-
10.1103/PhysRevB.59.R2498
-
D. P. Yu, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, H. Z. Zhang, Y. Ding, G. C. Xiong, L. P. You, J. Xu, and S. Q. Feng, Phy. Rev. B 59, R2498 (1999). 10.1103/PhysRevB.59.R2498
-
(1999)
Phy. Rev. B
, vol.59
, pp. 2498
-
-
Yu, D.P.1
Bai, Z.G.2
Wang, J.J.3
Zou, Y.H.4
Qian, W.5
Fu, J.S.6
Zhang, H.Z.7
Ding, Y.8
Xiong, G.C.9
You, L.P.10
Xu, J.11
Feng, S.Q.12
-
26
-
-
33750510877
-
-
(Tsinghua University Press, Beijing),.
-
J. Zhu, Nano-Materials and Devices (Tsinghua University Press, Beijing, 2003), p. 11.
-
(2003)
Nano-Materials and Devices
, pp. 11
-
-
Zhu, J.1
-
28
-
-
41949132236
-
Giant room-temperature piezoresistance in a metal-silicon hybrid structure
-
DOI 10.1103/PhysRevLett.100.145501
-
A. C. H. Rowe, A. Donoso-Barrera, C. Renner, and S. Arscott, Phys. Rev. Lett. 100, 145501 (2008). 10.1103/PhysRevLett.100.145501 (Pubitemid 351514265)
-
(2008)
Physical Review Letters
, vol.100
, Issue.14
, pp. 145501
-
-
Rowe, A.C.H.1
Donoso-Barrera, A.2
Renner, Ch.3
Arscott, S.4
|