Highly reliable TiN/ZrO2/TiN 3D stacked capacitors for 45 nm embedded DRAM technologies

ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Volumn , Issue , 2006, Pages 343-346

  Berthelot, A ^a   Caillat, C ^b   Huard, V ^a   Barnola, S ^c   Boeck, B ^d   Del Puppo, H ^d   Emonet, N ^b   Lalanne, F ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c CEA LETI   (France)

^d Freescale Semiconductors   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; EMBEDDED SYSTEMS; LEAKAGE CURRENTS; TITANIUM NITRIDE;

EMBEDDED DRAM (EDRAM); EQUIVALENT OXIDE THICKNESS (EOT); STACKED CAPACITOR;

CAPACITORS;

EID: 84943201169     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2006.307708     Document Type: Conference Paper

References (7)

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