Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes

Optics Express

Volumn 20, Issue 6, 2012, Pages 6808-6815

  Zhang, Yiyun ^a   Xie, Haizhong ^a   Zheng, Haiyang ^a   Wei, Tongbo ^a   Yang, Hua ^a   Li, Jing ^a   Yi, Xiaoyan ^a   Song, Xiangyang ^b   Wang, Guohong ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b JPSA Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GALLIUM COMPOUNDS; LIGHT EMISSION; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

BLUE LIGHT-EMITTING; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE LASERS; PICOSECONDS; SAPPHIRE SUBSTRATES; SIDE EMISSION; THERMAL DAMAGE;

LIGHT EMITTING DIODES;

ARTICLE; COLOR; COMPUTER AIDED DESIGN; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; LASER; SEMICONDUCTOR;

COLOR; COMPUTER-AIDED DESIGN; ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS; LIGHTING; SEMICONDUCTORS;

EID: 84858979834     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.006808     Document Type: Article

References (15)

1. T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, "Enhancement in light output of In Ga N-based microhole array light-emitting diodes," IEEE Photon. Technol. Lett. 17(6), 1163-1165 (2005). (Pubitemid 40843450)
2. J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, "Light extraction enhancement of Ga N-based light-emitting diodes using volcano-shaped patterned sapphire substrates," Jpn. J. Appl. Phys. 49(4), 042102 (2010).
3. C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, "Improved output power of Ga N-based light-emitting diodes grown on a nanopatterned sapphire substrate," Appl. Phys. Lett. 95(1), 011110 (2009).
4. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. Den Baars, and S. Nakamura, "Increase in extraction efficiency of Ga N-based light-emitting diodes via surface roughening," Appl. Phys. Lett. 84(6), 855-857 (2004).
5. T. B. Wei, Q. F. Kong, J. X. Wang, J. Li, Y. P. Zeng, G. H. Wang, J. M. Li, Y. X. Liao, and F. T. Yi, "Improving light extraction of In Ga N-based light emitting diodes with a roughened p-Ga N surface using Cs Cl nano-islands," Opt. Express 19(2), 1065-1071 (2011).
6. J. J. Wierer, Jr., A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nat. Photonics 3(3), 163-169 (2009).
7. C.-F. Lai, J.-Y. Chi, H.-C. Kuo, C.-H. Chao, H.-T. Hsueh, J.-F. T. Wang, and W.-Y. Yeh, "Anisotropy of light extraction from Ga N two-dimensional photonic crystals," Opt. Express 16(10), 7285-7294 (2008). (Pubitemid 351697415)
8. W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, "Enhanced light output of Ga N-based vertical-structured light-emitting diodes with two-step surface roughening using Kr F laser and chemical wet etching," IEEE Photon. Technol. Lett. 22(17), 1318-1320 (2010).
9. J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, "In Ga N-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling," IEEE Electron Device Lett. 31(7), 698-700 (2010).
10. X. H. Wang, P. T. Lai, and H. W. Choi, "Laser micromachining of optical microstructures with inclined sidewall profile," J. Vac. Sci. Technol. B 27(3), 1048-1052 (2009).
11. X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, "Evaluation of In Ga N/Ga N light-emitting diodes of circular geometry," Opt. Express 17(25), 22311-22319 (2009).
12. X. H. Wang, P. T. Lai, and H. W. Choi, "The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining," J. Appl. Phys. 108(2), 023110 (2010).
13. W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, "Geometrical shaping of In Ga N light-emitting diodes by laser micromachining," IEEE Photon. Technol. Lett. 21(15), 1078-1080 (2009).
14. K. C. Chen, Y. K. Su, C.-L. Lin, and H. C. Hsu, "Laser scribing of sapphire substrate to increase side light extraction of Ga N-based light emitting diodes," J. Lightwave Technol. 29(13), 1907-1912 (2011).
15. J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, "Enhanced extraction efficiency of In Ga N-based light-emitting diodes using 100-k Hz femtosecond-laser-scribing technology," IEEE Electron Device Lett. 31(3), 213-215 (2010).