Enhanced extraction efficiency of ingan-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology

IEEE Electron Device Letters

Volumn 31, Issue 3, 2010, Pages 213-215

  Lee, Jae Hoon ^a   Kim, Nam Seung ^a   Hong, Sang Su ^a   Lee, Jung Hee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

Ablation; Debris; Femtosecond laser; GaN; Light emitting diode (LED); Nanosecond laser; Pulsewidth; Sapphire; Scribing

Indexed keywords

ABLATION DEBRIS; FEMTO-SECOND LASER; GAN LIGHT-EMITTING DIODES; NANOSECOND LASERS; SAPPHIRE SCRIBING;

ABLATION; DEBRIS; DIODES; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; PULSED LASER APPLICATIONS; SAPPHIRE; ULTRASHORT PULSES;

LIGHT EMITTING DIODES;

EID: 77649147712     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2037592     Document Type: Article

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