Geometrical shaping of InGaN light-emitting diodes by laser micromachining

IEEE Photonics Technology Letters

Volumn 21, Issue 15, 2009, Pages 1078-1080

  Fu, W Y ^a   Hui, K N ^a   Wang, X H ^a   Wong, K K Y ^a   Lai, P T ^a   Choi, H W ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Laser micro machining; Light emitting diodes(LEDs)

Indexed keywords

LASER MICRO-MACHINING; LIGHT-EXTRACTION EFFICIENCY; SAPPHIRE SUBSTRATES;

COMPOSITE MICROMECHANICS; DIODES; EXTRACTION; LIGHT EMISSION; MICROMACHINING;

LIGHT EMITTING DIODES;

EID: 70349654012     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2022751     Document Type: Article

References (8)

1. T. Akasaka, H. Gotoh, T. Saito, and T. Makimoto, "High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers," Appl. Phys. Lett., vol.85, pp. 3089-3091, Oct. 2004.
2. E. F. Schubert and J. K. Kim, "Solid-state light sources getting smart," Science, vol.308, pp. 1274-1278, May 2005.
3. D. S. Han, J. Y. Kim, S. I. Na, S. H. Kim, K. D. Lee, B. Kim, and S. J. Park, "Improvement of light extraction efficiency of flip-chip lightemitting diode by texturing the bottom side-surface of sapphire substrate," IEEE Photon. Technol. Lett., vol.18, no.13, pp. 1406-1408,Jul. 1, 2006.
4. S. H. Kim, K. D. Lee, J. Y. Kim, M. K. Kwon, and S. J. Park, "Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography," Nanotechnology, vol.18, p. 055306, Feb. 2007.
5. W. N. Ng, C. H. Leung, P. T. Lai, and H. W. Choi, "Photonic crystal light-emitting diodes fabricated by microsphere lithography," Nanotechnology, vol.19, p. 255302, Jun. 2008.
6. C. C. Kao, H. C. Kuo, H. W. Huang, J. T. Chu, Y. C. Peng, Y. L. Hsieh, C. Y. Luo, S. C. Wang, C. C. Yu, and C. F. Lin, "Light-output enhancement in a nitride-based light-emitting diode with 22 undercut sidewalls," IEEE Photon. Technol. Lett., vol.17, no.1, pp. 19-21, Jan. 2005.
7. M. R. Krames, M. Ochiai-Holcomb, G. E. Hofler, C. Carter-Coman, E. I. Chen, I. H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J. W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, "High-power truncated-inverted-pyramid (AlxGa1-x)(0.5)In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency," Appl. Phys. Lett., vol.75, pp. 2365-2367, Oct. 1999.
8. X. H. Wang, P. T. Lai, and H. W. Choi, "Laser micromachining ofoptical microstructures with inclined sidewall profile," J. Vacuum Sci. Technol. B, vol.27, pp. 1048-1052, May 2009.