InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 698-700

  Lee, Jae Hoon ^a   Hwang, Seok Min ^a   Kim, Nam Seung ^a   Lee, Jung Hee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

Deep hole pattern; flip chip (FC); InGaN; laser beam; light emitting diode (LED); patterned sapphire

Indexed keywords

DIRECT BEAMS; ESCAPE PROBABILITY; EXTRACTION EFFICIENCIES; FLIP CHIP; FLIP-CHIP (FC); FLIP-CHIP LEDS; FLIP-CHIP LIGHT-EMITTING DIODES; FORWARD CURRENTS; HIGH-POWER; HOLE PATTERNS; OUTPUT POWER; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE;

DIODES; EXTRACTION; FLIP CHIP DEVICES; LASER BEAMS; LIGHT EMISSION; SAPPHIRE;

LIGHT EMITTING DIODES;

EID: 77954143095     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048887     Document Type: Article

References (15)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structure," Jpn. J. Appl. Phys., vol. 34, no. 7A, pp. L797-L799, Jul. 1995.
2. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., vol.84, no.6, p. 855, Feb. 2004.
3. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, "Improved light-output and electrical performance of InGaN-based light-emitting diode by mi-croroughening of the p-GaN surface," J. Appl. Phys., vol.93, no.11, pp. 9383-9385, Jun. 2003.
4. M. Y. Hsieh, C. Y. Wang, L. Y. Chen, T. P. Lin, M. Y. Ke, Y. W. Cheng, Y. C. Yu, C. P. Chen, D. M. Yeh, C. F. Lu, C. F. Huang, C. C. Yang, and J. J. Huang, "Improvement of external extraction efficiency in GaN-based LEDs by nano sphere lithography," IEEE Electron Device Lett., vol.29, no.7, pp. 658-660, Jul. 2008.
5. S. J. Wang, K. M. Uang, S. L. Chen, Y. C. Yang, S. C. Chang, T. M. Chen, and C. H. Chen, "Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes," Appl. Phys. Lett., vol.87, no.1, pp. 011 111-011 113, 2005.
6. J. H. Lee, J. T. Oh, S. B. Choi, Y. C. Kim, H. I. Cho, and J. H. Lee, "Enhancement of InGaN-based vertical LED with concavely patterned surface using patterned sapphire substrate," IEEE Photon. Technol. Lett., vol.20, no.5, pp. 345-347, Mar. 2008.
7. S. H. Huang, R. H. Horng, K. S. Wen, Y. F. Lin, K. W. Yen, and D. S. Wuu, "Improved light extraction of nitride-based flip-chip light emitting diodes via sapphire shaping and texturing," IEEE Photon. Technol. Lett., vol.18, no.24, pp. 2623-2625, Dec. 2006.
8. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, "Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes," J. Electrochem. Soc., vol.153, no.8, pp. G765-G770, Jun. 2006.
9. H. W. Huang, C. H. Lin, Z. K. Huang, K. Y. Lee, C. C. Yu, and H. C. Kuo, "Improved light output power of GaN-based light-emitting diodes using double photonic quasi-crystal patterns," IEEE Electron Device Lett., vol.30, no.11, pp. 1152-1154, Nov. 2009.
10. C. F. Shen, S. J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo, and S. C. Shei, "Nitride-based high-power flip-chip LED with double-side patterned sapphire substrate," IEEE Photon. Technol. Lett., vol.19, no.10, pp. 780-782, May 15, 2007.
11. C. E. Lee, Y. C. Lee, H. C. Kuo, T. C. Lu, and S. C. Wang, "High-brightness InGaN-GaN flip-chip light-emitting diodes with triple-light scattering layers," IEEE Photon. Technol. Lett., vol.16, no.8, pp. 659-661, Apr. 2008.
12. J. H. Lee, J. T. Oh, Y. C. Kim, and J. H. Lee, "Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shape-patterned sapphire," IEEE Photon. Technol. Lett., vol.20, no.18, pp. 1563-1564, Sep. 15, 2008.
13. S. W. Chae, D. H. Kim, T. G. Kimb, K. Y. Ko, and Y. M. Sung, "Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes," Appl. Phys. Lett., vol.90, no.20, pp. 201 113-201 115, May 2007.
14. J. H. Lee, N. S. Kim, D. Y. Lee, and J. H. Lee, "Effect of residual stress and sidewall emission of InGaN-Based LED by varying sapphire substrate thickness," IEEE Photon. Technol. Lett., vol.21, no.16, pp. 1151-1153, Aug. 15, 2009.
15. S. Lee, "Study of photon extraction efficiency in InGaN light-emitting diodes depending on chip structures and chip-mount schemes," Opt. Eng., vol.45, no.1, p. 014601, Jan. 2006.