Light extraction enhancement of gan-based light-emitting diodes using volcano-shaped patterned sapphire substrates

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 1, 2010, Pages 0421021-0421024

  Kim, Jae Bum ^a,c   Kim, Sang Mook ^a   Kim, Young Woo ^a   Kang, Sung Ku ^a   Jeon, Seong Ran ^a   Hwang, Nam ^a   Cho, Yeon Jo ^b   Chung, Chang Sub ^c  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b PlusTek Co Ltd   (South Korea)

^c Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION EFFICIENCIES; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MONTE CARLO; OPTICAL CHARACTERISTICS; PATTERNED SAPPHIRE SUBSTRATE; RAY-TRACING METHOD; SAPPHIRE SUBSTRATES; SLOPE ANGLES; ULTRAVIOLET LED;

EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SUBSTRATES; VOLCANOES;

GALLIUM ALLOYS;

EID: 77952624580     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.042102     Document Type: Article

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