Enhancement in light output of InGaN-based microhole array light-emitting diodes

IEEE Photonics Technology Letters

Volumn 17, Issue 6, 2005, Pages 1163-1165

  Hsueh, Taohung H ^a   Sheu, J K ^b   Huang, H W ^a   Chu, J Y ^a   Kao, C C ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Micro light emitting diode ( LED); Quantum well (QW)

Indexed keywords

ARRAYS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; INTEGRATED CIRCUIT MANUFACTURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; RAY TRACING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM GALLIUM NITRIDE LED; MICROHOLE ARRAY LIGHT EMITTING DIODE;

LIGHT EMITTING DIODES;

EID: 20544453209     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.846459     Document Type: Article

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