Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Chan, Chia Hua ^a   Hou, Chia Hung ^a   Tseng, Shao Ze ^a   Chen, Tsing Jen ^a   Chien, Hung Ta ^a   Hsiao, Fu Li ^b   Lee, Chien Chieh ^a   Tsai, Yen Ling ^c   Chen, Chii Chang ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c VANUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; FINITE DIFFERENCE TIME DOMAINS; FULL WIDTHS AT HALF MAXIMUMS; GAN-BASED LIGHT-EMITTING DIODES; LIGHT-EXTRACTION EFFICIENCY; OUTPUT POWER; ROCKING CURVES; SAPPHIRE SUBSTRATES;

CORUNDUM; CURRENT DENSITY; EXTRACTION; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MONOLAYERS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 67650504965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3173817     Document Type: Article

References (15)

1. E. F. Schubert, Light Emitting Diodes, 1st ed. (Cambridge University Press, Cambridge, England, 2003).
2. F. Yun, S. Dogan, Y. T. Moon, Y. Fu, J. Xu, D. Johnstone, and H. Morkoc, Phys. Status Solidi C 1610-1634 2, 2087 (2005). 10.1002/pssc.200461365
3. Y. Kato, S. Kitamura, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 0022-0248 144, 133 (1994). 10.1016/0022-0248(94)90448-0
4. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, Appl. Phys. Lett. 0003-6951 89, 161105 (2006). 10.1063/1.2363148
5. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, J. Electrochem. Soc. 0013-4651 153, G765 (2006). 10.1149/1.2209587
6. Y. J. Lee, T. C. Hsu, H. C. Kuo, S. C. Wang, Y. L. Yang, S. N. Yen, Y. T. Chu, Y. J. Shen, M. H. Hsieh, M. J. Jou, and B. J. Lee, Mater. Sci. Eng., B 122, 184 (2005). 10.1016/j.mseb.2005.05.019
7. T. V. Cuong, H. S. Cheng, H. G. Kim, H. Y. Kim, C. H. Hong, E. K. Suh, H. K. Cho, and B. H. Kong, Appl. Phys. Lett. 0003-6951 90, 131107 (2007). 10.1063/1.2714203
8. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, J. Appl. Phys. 0021-8979 103, 014314 (2008). 10.1063/1.2830981
9. C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, Appl. Phys. Lett. 0003-6951 93, 081108 (2008). 10.1063/1.2969062
10. G. T. Chen, J. I. Chyi, C. H. Chan, C. H. Hou, C. C. Chen, and M. N. Chang, Appl. Phys. Lett. 0003-6951 91, 261910 (2007). 10.1063/1.2828137
11. R. H. Horng, C. C. Yang, J. Y. Wu, S. H. Huang, C. E. Lee, and D. S. Wu, Appl. Phys. Lett. 0003-6951 86, 221101 (2005). 10.1063/1.1940723
12. C. H. Chan, C. H. Hou, C. K. Huang, T. J. Chen, S. Z. Tseng, H. T. Chien, C. H. Kuo, K. H. Hsieh, Y. L. Tsai, K. C. Hsu, and C. C. Chen, Jpn. J. Appl. Phys. 48, 020212 (2009). 10.1143/JJAP.48.020212
13. C. H. Chan, C. C. Chen, C. K. Huang, W. H. Weng, H. S. Wei, H. Chen, H. T. Lin, H. S. Chang, W. Y. Chen, W. H. Chang, and T. M. Hsu, Nanotechnology 0957-4484 16, 1440 (2005). 10.1088/0957-4484/16/9/003
14. S. J. Kim, Jpn. J. Appl. Phys., Part 1 0021-4922 44, 2921 (2005). 10.1143/JJAP.44.2921
15. W. J. Choi, Q. H. Park, D. Kim, H. Jeon, C. Sone, and Y. Park, J. Korean Phys. Soc. 0374-4884 49, 877 (2006).