Structural, electrical, and terahertz transmission properties of VO 2 thin films grown on c-, r-, and m-plane sapphire substrates

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Zhao, Yong ^a   Hwan Lee, Joon ^b   Zhu, Yanhan ^a   Nazari, M ^c   Chen, Changhong ^a,d   Wang, Haiyan ^b   Bernussi, Ayrton ^a   Holtz, Mark ^c   Fan, Zhaoyang ^a  

^a Department of Electrical and Computer Engineering   (United States)

^b Texas AandM University   (United States)

^c TEXAS TECH UNIVERSITY   (United States)

^d HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

C-SAPPHIRE; DOMAIN STRUCTURE; FREE CARRIER DENSITY; GROWTH DIRECTIONS; GROWTH ORIENTATIONS; INSULATING PHASE; INTENSITY MODULATIONS; M-PLANE; MATERIAL CANDIDATE; MONOCLINIC PHASE; R-SAPPHIRE; RESISTIVITY CHANGES; SAPPHIRE SUBSTRATES; SPUTTERING DEPOSITION; STRUCTURAL PHASE TRANSFORMATIONS; SUBSTRATE SURFACE; TERAHERTZ; TERAHERTZ TRANSMISSION; TRANSMISSION CHARACTERISTICS; TRANSMISSION MEASUREMENTS;

ELECTRIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; FREQUENCY BANDS; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES;

SUBSTRATES;

EID: 84858964933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3692391     Document Type: Article

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