Gate-field-induced phase transitions in VO2: Monoclinic metal phase separation and switchable infrared reflections

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Chen, Changhong ^a   Wang, Renfan ^b   Shang, Lang ^a   Guo, Chongfeng ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN RESEARCH INSTITUTE OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ISOMERS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; PHASE MODULATION; PHASE SEPARATION; REFLECTION; SEMICONDUCTING INDIUM; SEMICONDUCTOR INSULATOR BOUNDARIES;

ACTIVE LAYERS; GATE FIELDS; GATE VOLTAGES; INDUCED PHASE TRANSITIONS; INFRARED REFLECTIONS; SEMI-CONDUCTORS; SPEED OPERATIONS; STRUCTURAL PHASE TRANSITIONS; SWITCHABLE; UNIAXIAL STRESSES;

PHASE TRANSITIONS;

EID: 55149104639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009569     Document Type: Article

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