Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

  Nazari, M ^a   Chen, Changhong ^b   Bernussi, A A ^b   Fan, Z Y ^b   Holtz, M ^a  

^a TEXAS TECH UNIVERSITY   (United States)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGE; DOPING CONCENTRATION; FREE CARRIER CONCENTRATION; MIXED PHASE; NATIVE DEFECT; ONSET TEMPERATURE; PHASE TRANSITION PROPERTIES; RAMAN BANDS; TEMPERATURE DEPENDENCE; VANADIUM DIOXIDE THIN FILMS; VIBRATIONAL ENERGIES; VIBRATIONAL PROPERTIES;

CARRIER CONCENTRATION; METAL INSULATOR BOUNDARIES; PHASE DIAGRAMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM;

METAL INSULATOR TRANSITION;

EID: 80052103898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3626032     Document Type: Article

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