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Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

Influence of defects on structural and electrical properties of VO 2 thin films

(7) Chen, Changhong a,b Zhao, Yong a Pan, Xuan a Kuryatkov, V a Bernussi, A a Holtz, M c Fan, Zhaoyang a

a Texas Tech University (United States)

b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

c TEXAS TECH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DENSITY; DIFFERENT SUBSTRATES; DONOR DENSITY; HEAVILY DOPED; HIGHER T; INSULATING PHASE; INTERFACIAL-LAYER THICKNESS; MULTI DOMAINS; N-TYPE CONDUCTIVITY; P-TYPE; POLYCRYSTALLINE; SMALL POLARONS; STRAINED LAYERS; STRUCTURAL AND ELECTRICAL PROPERTIES;

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEFECTS; ELECTRIC PROPERTIES; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS;

TENSILE STRAIN;

EID: 79961120520 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609084 Document Type: Article

Times cited : (94)

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