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Applied Physics Letters

Volumn 98, Issue 25, 2011, Pages

Enhanced performance of room-temperature-grown epitaxial thin films of vanadium dioxide

(4) Nag, Joyeeta a Payzant, E Andrew b More, Karren L b Haglund Jr , Richard F a

a VANDERBILT UNIVERSITY (United States)

b OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOUND SEMICONDUCTORS; ENHANCED PERFORMANCE; EPITAXIAL THIN FILMS; EPITAXIALLY GROWN; FILM-SUBSTRATE INTERFACES; HIGH-TEMPERATURE GROWTH; INSULATOR-TO-METAL TRANSITIONS; NANO-STRUCTURED; ROOM TEMPERATURE; STRUCTURAL REORGANIZATION; SWITCHING CONTRAST; VANADIUM DIOXIDE;

ELECTRIC FIELDS; EPITAXIAL GROWTH; METAL INSULATOR TRANSITION; MORPHOLOGY; SEMICONDUCTOR DOPING; VANADIUM ALLOYS;

EPITAXIAL FILMS;

EID: 79959605983 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3600333 Document Type: Article

Times cited : (46)

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