Preparation and characterization of epitaxial VO2 films on sapphire using postepitaxial topotaxy route via epitaxial V2O 3 films

Japanese Journal of Applied Physics

Volumn 47, Issue 2 PART 1, 2008, Pages 1022-1027

  Yamaguchi, Iwao ^a   Manabe, Takaaki ^a   Tsuchiya, Tetsuo ^a   Nakajima, Tomohiko ^a   Sohma, Mitsugu ^a   Kumagai, Toshiya ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Electric conductivity; Epitaxy; Metal organic deposition; Redox reaction; Sapphire substrate; Topotaxy; VO2 thin film

Indexed keywords

ALUMINUM; CORUNDUM; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; FILM PREPARATION; HYSTERESIS; HYSTERESIS LOOPS; MAGNETIC MATERIALS; ORGANOMETALLICS; REDOX REACTIONS; SAPPHIRE; SUBSTRATES; THICK FILMS; TRANSITION METALS; VANADIUM;

EPITAXY; METAL ORGANIC DEPOSITION; SAPPHIRE SUBSTRATE; TOPOTAXY; VO2 THIN FILM;

AMORPHOUS FILMS;

EID: 54249113647     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.1022     Document Type: Article

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