Turn-off and short circuit behaviour of 4H SiC JFETs

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2001, Pages 365-369

  Weis, B ^a   Braun, M ^a   Friedrichs, P ^a,b  

^a Siemens Industry Automation and Drive Technologies   (Germany)

^b SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CURRENT MEASUREMENT; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING CIRCUITS; VOLTAGE MEASUREMENT;

FREEWHEELING DIODE; SWITCHING POWER DEVICE;

MOSFET DEVICES;

EID: 0035148881     PISSN: 01972618     EISSN: None     Source Type: Journal    
DOI: 10.1109/IAS.2001.955445     Document Type: Article

References (6)

1. High voltage double implanted power MOSFETs in 6H SiC
2. 1.4kV 4H-SiC UMOSFET with low specific on resistance
3. Dynamic characteristics of high voltage 4H-SiC vertical JFETs
4. Power semiconductor devices
5. The vertical silicon carbide JFET - A fast and low loss solid state power switching device
6. Characterisation of fast 4.5kV SiC P-N diodes