High-power Modular Multilevel Converters with SiC JFETs

2010 IEEE Energy Conversion Congress and Exposition, ECCE 2010 - Proceedings

Volumn , Issue , 2010, Pages 2148-2155

  Peftitsis, Dimosthenis ^a   Tolstoy, Georg ^a   Antonopoulos, Antonios ^a   Rabkowski, Jacek ^a   Lim, Jang Kwon ^a   Bakowski, Mietek ^a   Angquist, Lennart ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Diode less operation; High voltage direct current transmission; Modular multilevel converter; SiC JFETs; Silicon carbide

Indexed keywords

ANTI-PARALLEL DIODES; BODY DIODE; CONDUCTION LOSS; HIGH VOLTAGE; HIGH VOLTAGE DIRECT CURRENT; HIGH-POWER; LOSS ESTIMATION; MODULAR MULTILEVEL CONVERTERS; SIC JFETS; STEADY-STATE OPERATION; SUBMODULES; SWITCHING TRANSIENT; THEORETICAL INVESTIGATIONS; WAVE FORMS;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; DIODES; ELECTRIC CONVERTERS; ENERGY CONVERSION; HVDC POWER TRANSMISSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650133596     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2010.5618274     Document Type: Conference Paper

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