Silicon Carbide power semiconductors - New opportunities for high efficiency

2008 3rd IEEE Conference on Industrial Electronics and Applications, ICIEA 2008

Volumn , Issue , 2008, Pages 1770-1774

  Friedrichs, Peter ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DC GENERATORS; DIODES; ELECTRIC EQUIPMENT; ELECTRONICS INDUSTRY; INDUSTRIAL ELECTRONICS; NONMETALS; POWER ELECTRONICS; POWER QUALITY; REUSABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE;

APPLICATIONS.; BASE MATERIAL; CONVENTIONAL SYSTEMS; ENERGY SAVINGS; HIGH POWERS; HIGH VOLTAGE POWER; HIGH-EFFICIENCY; IMPROVED PERFORMANCE; INFINEON; MARKET PENETRATION; NEW OPPORTUNITIES; NEW SOLUTIONS; POWER DEVICES; POWER RATINGS; POWER SEMI-CONDUCTOR; SWITCHING DEVICES;

ENERGY CONSERVATION;

EID: 51949118438     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIEA.2008.4582824     Document Type: Conference Paper

References (11)

1. www.infineon.com, www.cree.com
2. R. Rupp, C.Miesner and I.Zverev, "Combination of new generation CoolMOS and thinQ!Silicon Carbide Schottky diodes : new horizons in hard switching applications", PCIM 2001, Chicago
3. B. Weis, M. Wölz, D. Peters, "A new 690V AC drive with integrated sinewave output filter and SiC schottky freewheeling diodes", Proceedings of the SPS/IPC/Drives 2006, Nürnberg, 2006, Berlin, Offenbach, VDE Verlag, ISBN 3-8007-2994-6
4. D. Stephani, R. Schoerner, D. Peters, P. Friedrichs, "Almost ideal thermoionic-Emission Properties of Ti-based 4H-SiC Schottky Barrier Diodes", presented at the ICSCRM 2005, Pittsburgh, September 2005
5. M. Treu, "A surge current stable and avalanche rugged SiC merged pn-Schottky diode blocking 600V, especially suited for PFC Applications", presented at the ICSCRM 2005, Pittsburgh, September 2005
6. Nd Generation 600 V SiC Schottky Diodes Use Merged Pn/Schottky Structure For Surge Overload Protection", to be presented at APEC 2006
7. P.Friedrichs, H.Mitlehner, W.Bartsch, K.O.Dohnke, R.Kaltschmidt, U.Weinert, B.Weis, D.Stephani, "Static and dynamic Characterisctics of 4H-SiC JFETs Designed for Different Blocking Categories" , Mat. Science For., Vol. 338-342 (2000), pp.1243-1246.
8. P.Friedrichs, H.Mitlehner, R.Schörner, R.Elpelt, and D.Stephani, "Optimization of Vertical Silicon Carbide Field Effect Transistors towards a cost attractive SiC Power Switch", Mat. Science For. Vols. 457-460 (2004) pp.1201-1204
9. M.Treu, R. Rupp, P. Blaschitz, K. Rueschenschmidt, Th. Sekinger, P. Friedrichs, R. Elpelt, D. Peters, "Strategic considerations for unipolar SiC switch options: JFET vs. MOSFET", Proc. IAS 2007, New Orleans, on CD.
10. P. Friedrichs, "Charge controlled Silicon Carbide switching devices", MRS Proceedings vol. 815, presented at the MRS Spring meeting 2004
11. P. Friedrichs and T. Reimann, "Behavior of high voltage SiC VJFETs under avalanche conditions", accepted for APEC 2006, March 2006, Dallas