Spectroscopic and capacitance-voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)-POSS and fullerene cages

Applied Surface Science

Volumn 258, Issue 10, 2012, Pages 4213-4221

  Klocek, Jolanta ^a   Henkel, Karsten ^a   Kolanek, Krzysztof ^a   Zschech, Ehrenfried ^b   Schmeißer, Dieter ^a  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

3 Aminopropyltrimethoxysilane; Capacitance voltage characterization; Low k materials; X ray photoelectron spectroscopy

Indexed keywords

BUTYRIC ACID; COATED MATERIALS; COPPER; COPPER COMPOUNDS; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; FULLERENES; LOW-K DIELECTRIC; PHOTOELECTRONS; PHOTONS; SURFACE CHEMISTRY; X RAY PHOTOELECTRON SPECTROSCOPY;

3-AMINOPROPYL TRIMETHOXYSILANE; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE TECHNIQUES; COPPER PHTHALOCYANINE; DOPANT CONCENTRATIONS; LOW DIELECTRIC CONSTANTS; LOW-K MATERIALS; [6 ,6]-PHENYL-C61-BUTYRIC ACID METHYL ESTERS;

CAPACITANCE;

EID: 84857922910     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.12.004     Document Type: Article

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