XPS study of silicon surface after ultra-low-energy ion implantation

Surface Science

Volumn 600, Issue 18, 2006, Pages 3753-3756

  Yamamoto, Kazuhiro ^a   Itoh, Hiroshi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Doping; Ion implantation; Phosphorus; Silicon; Surface; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FERMI LEVEL; ION IMPLANTATION; PHOSPHORUS; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ION DOPING; ION DOSES; ION ENERGY; SURFACE ELECTRICAL STATES;

SILICON;

EID: 33749151341     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.079     Document Type: Article

References (9)

1. ITRS-2003 channel doping roadmap.
2. Whelan S., La Magna A., Privitera V., Mannino G., Italia M., Bongiorno C., Fortunato G., and Mariucci L. Phys. Rev. B 67 (2003) 75201
3. Yamamoto K., Watanabe T., Wazumi K., Kokai F., Koga Y., and Fujiwara S. Diamond Relat. Mater. 10 (2000) 895
4. Al-bayati A.H., Marton D., Todorov S.S., Boyd K.J., Rabalais J.W., Armour D.G., Gordon J.S., and Duller G. Rev. Sci. Instrum. 65 (1994) 2680
5. Hofsäss H., Binder H., Klumpp T., and Recknagel E. Diamond Relat. Mater. 3 (1994) 137
6. Yabe E. Rev. Sci. Instrum. 58 (1987)
7. In: Rabalais J.W. (Ed). Low Energy Ion-Surface Interactions (1994), John Wiley & Sons, West Sussex, England
8. Fukutome H., Takeno K., Yasuda H., Maehashi K., Hasegawa S., and Nakashima H. Appl. Surf. Sci. 130-132 (1998) 346
9. Ziegler J.F., Biersack J.P., and Littmark U. The Stopping and Range of Ions in Solids (1985), Pergamon Press, New York