High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

Nanotechnology

Volumn 21, Issue 16, 2010, Pages

  Joung, Daeha ^a   Chunder, A ^a   Zhai, Lei ^a   Khondaker, Saiful I ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC DIELECTROPHORESIS; AMBIPOLAR; AMBIPOLAR BEHAVIOR; BACKGATE VOLTAGE; DIELECTROPHORESIS; GOLD SOURCE; HIGH YIELD; NANOELECTRONIC DEVICES; P-TYPE; SIGNIFICANT IMPACTS; THERMAL-ANNEALING;

ELECTRON MOBILITY; ELECTROPHORESIS; FABRICATION; GRAPHENE; GRAPHITE; HOLE MOBILITY; MESFET DEVICES; NANOELECTRONICS;

FIELD EFFECT TRANSISTORS;

GRAPHITE; NANOMATERIAL; OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTROPHORESIS; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; OXIDATION REDUCTION REACTION; PARTICLE SIZE; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTROPHORESIS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; OXIDATION-REDUCTION; OXIDES; PARTICLE SIZE;

EID: 77950507175     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/16/165202     Document Type: Article

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