Facilitating growth of InAsInP coreshell nanowires through the introduction of Al

Journal of Crystal Growth

Volumn 345, Issue 1, 2012, Pages 11-15

  Haapamaki, C M ^a   Baugh, J ^b   Lapierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF WATERLOO   (Canada)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting aluminium compounds; B2. Semiconducting IIIV materials; B2. Semiconducting ternary compounds

Indexed keywords

ADATOM DIFFUSION; ADDITION OF AL; AL COMPOSITION; CORE SHELL STRUCTURE; CORE-SHELL NANOWIRES; GAAS SUBSTRATES; GROWTH MODES; INAS; INP; P-SHELL; PHASE CHANGE; SEED PARTICLE; SEMI CONDUCTING III-V MATERIALS; SEMICONDUCTING TERNARY COMPOUNDS; SHELL THICKNESS; SURFACTANT EFFECTS;

ALUMINUM; ALUMINUM COMPOUNDS; EPITAXIAL GROWTH; GAS SOURCE MOLECULAR BEAM EPITAXY; INDIUM ARSENIDE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SHELLS (STRUCTURES); SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

NANOWIRES;

EID: 84857664122     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.02.012     Document Type: Article

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