Growth and characterization of InP nanowires with InAsP insertions

Nano Letters

Volumn 7, Issue 6, 2007, Pages 1500-1504

  Tchernycheva, Maria ^a,d   Cirlin, George E ^a,b   Patriarche, Gilles ^a   Travers, Laurent ^a   Zwiller, Valery ^c   Perinetti, Umberto ^c   Harmand, Jean Christophe ^a  

^a UNIV PARIS SUD   (France)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; GROWTH TEMPERATURE; HETEROJUNCTIONS; INDIUM PHOSPHIDE; PHOTOLUMINESCENCE; WAVELENGTH;

FLUX RATIO; LATERAL SURFACES; ROOM-TEMPERATURE;

NANOWIRES;

INDIUM; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOTUBE; ORGANOARSENIC DERIVATIVE; PHOSPHINE DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; CRYSTALLIZATION; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOSPHINES; SURFACE PROPERTIES;

EID: 34547252423     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070228l     Document Type: Article

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