Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2815-2822

  Vasallo, Beatriz G ^a   Wichmann, Nicolas ^b   Bollaert, Sylvain ^b   Roelens, Yannick ^b   Cappy, Alain ^b   González, Tomás ^a   Pardo, Daniel ^a   Mateos, Javier ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b Institut d'Electronique   (France)

Author keywords

Double gate high electron mobility transistor (DG HEMT); Dynamic behavior; Monte Carlo (MC) simulations

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSCONDUCTANCE;

DOUBLE-GATE HIGH-ELECTRON MOBILITY TRANSISTOR (DG-HEMT); DRAIN CONDUCTANCE RATIO; GATE LENGTHS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36248998882     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.907801     Document Type: Article

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