Design and fabrication of 4H-SiC lateral high-voltage devices on a semi-insulating substrate

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 754-760

  Lee, Wen Shan ^a   Chu, Kuan Wei ^a   Huang, Chih Fang ^a   Lee, Lurng Shehng ^b   Tsai, Min Jinn ^b   Lee, Kung Yen ^c   Zhao, Feng ^d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

High voltage; lateral device; reduced surface field (RESURF); semi insulating; silicon carbide (SiC); two zone

Indexed keywords

HIGH VOLTAGE; LATERAL DEVICE; REDUCED SURFACE FIELDS; SEMI-INSULATING; TWO-ZONE;

DESIGN; ELECTRIC FIELDS; FABRICATION; INSULATION; SUBSTRATES;

SILICON CARBIDE;

EID: 84857645054     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2178028     Document Type: Article

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