Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices

IEEE Transactions on Electron Devices

Volumn 51, Issue 1, 2004, Pages 141-148

  Imam, Mohamed ^a   Quddus, Mohammed ^a   Adams, Jim ^a   Hossain, Zia ^a  

^a ON SEMICONDUCTOR   (United States)

Author keywords

Device design; Device optimization; High voltage; LDMOS; Power ICs; RESURF technology

Indexed keywords

ELECTRIC FIELDS; OPTIMIZATION; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

CHARGE SHARING; REDUCED SURFACE FIELD LATERAL DEVICES;

ELECTRIC BREAKDOWN;

EID: 0742321653     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821383     Document Type: Article

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