Carbon based bottom gate thin film transistor

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 805-810

  Maeng, S L ^a   Uchikoga, S ^a,d   Clough, F J ^b   Tagliaferro, A ^c   Flewitt, A J ^a   Robertson, J ^a   Milne, W I ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

^c POLITECNICO DI TORINO   (Italy)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; FERMI LEVEL; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; VACUUM APPLICATIONS;

AMORPHOUS CARBON FILMS; FILTERED CATHODIC VACUUM ARC METHOD; VALENCE BANDS;

AMORPHOUS FILMS;

EID: 0033729193     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00223-X     Document Type: Article

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