Characterization of low dielectric constant amorphous carbon nitride films

Applied Surface Science

Volumn 159, Issue , 2000, Pages 341-344

  Aono, M ^a   Nitta, S ^a   Katsuno, T ^a   Itoh, T ^a   Nonomura, S ^a  

^a GIFU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CAPACITANCE; CARBON INORGANIC COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRODES; PERMITTIVITY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;

CARBON NITRIDE FILMS; FREQUENCY DEPENDENCE;

SEMICONDUCTING FILMS;

EID: 0034205906     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00057-X     Document Type: Article

References (12)

1. Takada N., Arai K., Nitta S., Nonomura S. Appl. Surf. Sci. 113/114:1997;274.
2. Nitta S., Takada N., Sugiyama K., Itoh T., Nonomura S. J. Non-Cryst. Solids. 227-230:1997;655-658.
3. Iwasaki T., Aono M., Nitta S., Itoh T., Nonomura S. Diamond Relat. Mater. 8:1999;440-445.
4. Furukawa H., Nitta S., Habuchi M., Iwasaki T., Itoh T., Nonomura S. MRS Conf. Proc. 507:1998;465.
5. M. Aono, S. Nitta, T. Iwasaki, H. Yokoi, T. Itoh, S. Nonomura, MRS Conf. (April 5-9, 1999) Abstract, O.6.7.
6. T. Itoh, M. Aono, S. Yoshida, S. Hattori, T. Katsuno, S. Nitta, S. Nonomura, J. Non-Cryst. Solids, in press.
7. Wong S.S., Loke A.L.S, Wetzel J.T., Townsend P.H., Vrtis R.N., Zussman M.P. Low-dielectric constant materials IV. MRS Symp. Proc. 511:1998;317.
8. Tsai H.C., Bogy D.B. J. Vac. Sci. Technol., A. 5:1987;3287.
9. Ramsteiner M., Wagner J. Appl. Phys. Lett. 51:1987;3287.
10. Jackson W.B., Nemanich R.J., Thompson M.J., Wacker B. Phys. Rev. B. 33:1986;6936.
11. Nemanich, R.J., in: Pankove, J.I. (Ed.), Semiconductors and Semimetals, Vol. 21, C, Academic Press, pp. 375-406.
12. Street R.A. Hydrogenated Amorphous Silicon. 1991;Cambridge Univ. Press.