RF CMOS reliability simulations

Microelectronics Reliability

Volumn 48, Issue 8-9, 2008, Pages 1581-1585

  Sasse, Guido T ^a   Acar, Mustafa ^b   Kuper, Fred G ^a   Schmitz, Jurriaan ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; POWER AMPLIFIERS; PROCESS DESIGN; PROCESS ENGINEERING; SULFATE MINERALS;

ANALOG DESIGNS; CIRCUIT PERFORMANCES; DEGRADATION MODELING; GATE-OXIDE BREAKDOWN; HOT-CARRIER DEGRADATION; LIFETIME PREDICTIONS; RF-CMOS; SIMULATION APPROACH; SIMULATION RESULTS;

NETWORKS (CIRCUITS);

EID: 50249156856     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.017     Document Type: Article

References (16)

1. Kaczer B et al. In: Proceedings of IEDM; 2000. p. 553-6.
2. Yang H et al. In: Proceedings of RFIC; 2003. p. 663-6.
3. Yu C., et al. Trans El Dev 52 8 (2005) 1751-1758
4. Yuan J.S., et al. Trans El Dev 55 1 (2008) 430-434
5. .
6. Karam M et al. In: Proceedings of ISCAS; 2001. p. 515-8.
7. Rosenbaum E et al. In: Proceedings of IEDM; 1989. p. 331-4.
8. Kaczer B., et al. Trans El Dev 49 3 (2002) 507-513
9. Lunenborg MM. PhD thesis, University of Twente; 1996.
10. Hu C., et al. Trans El Dev 32 2 (1985) 375-385
11. Hu C. J Solid-State Circuit 27 3 (1992) 241-246
12. Takeda E., et al. El Dev Lett 4 4 (1983) 111-113
13. Degraeve R., et al. Trans El Dev 45 4 (1998) 904-911
14. Nicollian PE et al. In: Proceedings of IRPS; 2000.
15. Suné J., et al. Trans El Dev 51 10 (2004) 1584-1592
16. Acar M et al. In: Proceedings of IMS; 2007. p. 1095-8.