Time-dependent variability related to BTI effects in MOSFETs: Impact on CMOS differential amplifiers

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 305-310

  Martin Martinez, Javier ^a   Rodriguez, Rosana ^a   Nafria, Montserrat ^a   Aymerich, Xavier ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Analog circuits; Circuit simulation; NBTI; Oxide reliability; PBTI; Process variability

Indexed keywords

AMPLIFIER CIRCUITS; CIRCUIT DESIGNS; CIRCUIT FUNCTIONALITY; CIRCUIT LEVELS; CIRCUIT RELIABILITY; CMOS DIFFERENTIAL AMPLIFIERS; DEVICE MISMATCH; DEVICE RELIABILITY; EXPERIMENTAL DATA; GATE OXIDE; GATE OXIDE DEGRADATION; INTRINSIC PROCESS; MONTE CARLO SIMULATION; MOSFETS; NBTI; OXIDE RELIABILITY; PBTI; PMOS TRANSISTORS; PROCESS VARIABILITY; TIME DEPENDENCE; TIME-DEPENDENT; TRANSISTOR SCALING;

ANALOG CIRCUITS; CIRCUIT SIMULATION; DEGRADATION; DIFFERENTIAL AMPLIFIERS; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MONTE CARLO METHODS; NEGATIVE TEMPERATURE COEFFICIENT; RELIABILITY; THERMODYNAMIC STABILITY;

SPICE;

EID: 67650281234     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2019762     Document Type: Article

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