SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 7, 2011, Pages 1384-1387

NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance

(9) Ayala, N a Martin Martinez, J a Amat, E a Gonzalez, M B b Verheyen, P b Rodriguez, R a Nafria, M a Aymerich, X a Simoen, E b

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b IMEC (Belgium)

Author keywords

CMOS; Modelling; NBTI; Reliability; SPICE; Variability

Indexed keywords

CIRCUIT PERFORMANCE; CIRCUIT SIMULATORS; CMOS; CMOS INVERTERS; MOBILITY DEGRADATION; MODELLING; NBTI; NEGATIVE BIAS TEMPERATURE INSTABILITY; P-MOSFETS; SIMULATION TECHNIQUE; TIME-DEPENDENT; VARIABILITY;

ELECTRIC NETWORK ANALYSIS; MOSFET DEVICES; SPICE; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

INTEGRATED CIRCUITS;

EID: 79958046618 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.093 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.