Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier

Microelectronic Engineering

Volumn 93, Issue , 2012, Pages 50-55

  Afandiyeva, I M ^a   Bulbul M M ^b   Altindal, S ^b   Bengi, S ^b  

^a BAKU STATE UNIVERSITY   (Azerbaijan)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

ac electrical conductivity; Al TiW PtSi n Si Schottky diodes; Dielectric properties; Electric modulus; Silicide silicon contact

Indexed keywords

AC ELECTRICAL CONDUCTIVITY; APPLIED VOLTAGES; CONTACT STRUCTURE; ELECTRIC MODULUS; ELECTRICAL CONDUCTIVITY; FREQUENCY DEPENDENT; FREQUENCY RANGES; HIGHER FREQUENCIES; IMAGINARY PARTS; INTERFACIAL POLARIZATION; LOW FREQUENCY; METAL SEMICONDUCTOR INTERFACE; PEAK POSITION; PLATINUM SILICIDES; REAL PART; SCHOTTKY DIODES; VOLTAGE CURVE; VOLTAGE RANGES;

ALUMINUM; ALUMINUM COATINGS; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ENERGY DISSIPATION; PLATINUM; PLATINUM ALLOYS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; SILICON;

DIELECTRIC PROPERTIES;

EID: 84856993321     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.05.041     Document Type: Article

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