Investigation of TiW contacts to 4H-SiC bipolar junction devices

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 887-890

  Lee, Hyung Seok ^a   Domeij, Martin ^a   Zetterling, Carl Mikael ^a   Östling, Mikael ^a   Lu, Jun ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Bipolar junction transistor; Ohmic contacts; Titanium; Tungsten

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRONIC STRUCTURE; FABRICATION; THERMAL EFFECTS; TITANIUM ALLOYS; X RAY DIFFRACTION;

CONTACT STUDY; EMITTER STRUCTURE CONTACT RESISTIVITY; LINEAR TRANSMISSION LINE METHOD (LTLM) STRUCTURES; TITANIUM TUNGSTEN CONTACTS;

OHMIC CONTACTS;

EID: 37849035711     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.887     Document Type: Conference Paper

References (4)

1. C.-M. Zetterling: 'Processing Technology for Silicon Carbide devices' (EMIS Processing Series, INSPEC, IEE, London, UK, 2002) ISBN 0 85296 998 8
2. L.G. Fursin et al.: Electron. Lett. Vol. 40 (2004), pp. 270-71
3. C.F. Huang et al.: Device Research Conference (2002), pp.183-4
4. S.-K Lee et al.: J. Appl. Phys. Vol. 92 (2002), pp. 253-60