Ion implantation and SiC transistor performance

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Gurfinkel, M ^a   Potbhare, S ^b   Xiong, H D ^c   Suehle, J S ^c   Shapira, Yoram ^a   Lelis, A J ^d   Habersat, D ^d   Goldsman, N ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b UNIVERSITY OF MARYLAND   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; AS-GROWN; BULK OXIDE TRAPS; CAPACITANCE VOLTAGES; CURRENT VOLTAGES; EFFECTIVE ELECTRON MOBILITIES; FIXED CHARGES; INTERFACE TRAPS; LOW-FREQUENCY NOISE MEASUREMENTS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; OXIDE FIXED CHARGES; OXIDE TRAPS; POSTOXIDATION ANNEALING; SI DEVICES; THERMAL OXIDES; TRANSISTOR PERFORMANCE;

ANNEALING; CHARGE COUPLED DEVICES; ELECTRON MOBILITY; ION BOMBARDMENT; ION IMPLANTATION; IONS; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 65449115617     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110071     Document Type: Article

References (14)

1. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 0741-3106 10.1109/55.915604 22, 176 (2001).
2. M. Gurfinkel, H. D. Xiong, K. P. Cheung, J. S. Suehle, J. B. Bernstein, Y. Shapira, A. J. Lelis, D. B. Habersat, and N. Goldsman, IEEE Trans. Electron Devices 0018-9383 55, 2004 (2008). 10.1109/TED.2008.926626
3. F. Moscatelli, A. Poggi, S. Solmi, and R. Nipoti, IEEE Trans. Electron Devices 0018-9383 55, 961 (2008). 10.1109/TED.2008.917107
4. D. Peters, R. Schörner, P. Friedrichs, and D. Stephani, Mater. Sci. Forum 433-436, 769 (2003). 10.4028/www.scientific.net/MSF.433-436.769
5. Sei-Hyung Ryu, A. Agarwal, J. Richmond, J. Palmour, N. Saks, and J. Williams, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.1004222 23, 321 (2002).
6. S. -H. Ryu, A. Agarwal, S. Krishnaswami, J. Richmond, and J. Palmour, Mater. Sci. Forum 457-460, 1385 (2004). 10.4028/www.scientific.net/MSF.457-460. 1385
7. S. Krishnaswami, M. Das, B. Hull, S. H. Ryu, J. Scofield, A. Agarwal, and J. Palmour, Proceedings of the 43rd Annual IEEE International Reliability Physics Symposium, 2005 (unpublished), p. 592.
8. K. Matocha, G. Dunne, S. Soloviev, and R. Beaupre, IEEE Trans. Electron Devices 0018-9383 55, 1830 (2008). 10.1109/TED.2008.926595
9. A. Agarwal and S. Haney, J. Electron. Mater. 0361-5235 10.1007/s11664-007-0321-3 37, 646 (2008).
10. A. Blaum, O. Pilloud, G. Scalea, J. Victory, and F. Sischka, Proceedings of IEEE International Conference on Microelectronic Test Structures, 2001 (unpublished), p. 125.
11. W. Wang, S. Banerjee, T. P. Chow, R. J. Gutmann, T. Issacs-Smith, J. Williams, K. A. Jones, A. Lelis, W. Tipton, S. Scozzie, and A. Agarwal, Mater. Sci. Forum 457-460, 1309 (2004). 10.4028/www.scientific.net/MSF.457-460.1309
12. R. Schomer, P. Friedrichs, D. Peters, and D. Stephani, IEEE Electron Device Lett. 0741-3106 10.1109/55.761027 20, 241 (1999).
13. S. Potbhare, N. Goldsman, G. Pennington, A. Lelis, and J. M. McGarrity, Mater. Sci. Forum 556-557, 847 (2007). 10.4028/www.scientific.net/MSF.556-557. 847
14. R. Jayaraman and C. G. Sodini, IEEE Trans. Electron Devices 36, 1773 (1989). 10.1109/16.34242