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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 1, 2012, Pages

Crystallization of Ge in SiO2 matrix by femtosecond laser processing

(5) Salihoglu, Omer a Kürüm, Ula b Yaglioglu, Halime Gul b Elmali, Ayhan b Aydinli, Atilla a

a BILKENT UNIVERSITY (Turkey)

b ANKARA UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; ULTRAFAST LASERS; ULTRASHORT PULSES;

AFM; FEMTOSECOND LASER PROCESSING; FEMTOSECOND LASER PULSE IRRADIATION; GERMANIUM NANOCRYSTALS; LASER FLUENCES; MATRIX; OPTIC PHONON; OXIDE MATRIX; STRONG LUMINESCENCE;

GERMANIUM;

EID: 84856593252 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3677829 Document Type: Article

Times cited : (9)

References (38)

1
- 0035307245
- x
- DOI 10.1109/16.915694, PII S0018938301023474
- Y. C. King, T. J. King, and C. Hu, IEEE Trans. Electron Devices 48, 696 (2001). 10.1109/16.915694 (Pubitemid 32372229)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.4 , pp. 696-700
- King, Y.-C.¹ King, T.-J.² Hu, C.³

2
- 79955984698
- Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
- DOI 10.1063/1.1459760
- W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, V. Ng, D. A. Antoniadis, and E. A. Fitzgerald, Appl. Phys. Lett. 80, 2014 (2002). 10.1063/1.1459760 (Pubitemid 34326271)
- (2002) Applied Physics Letters , vol.80 , Issue.11 , pp. 2014
- Choi, W.K.¹ Chim, W.K.² Heng, C.L.³ Teo, L.W.⁴ Ho, V.⁵ Ng, V.⁶ Antoniadis, D.A.⁷ Fitzgerald, E.A.⁸

3
- 0001111167
- 10.1063/1.119543
- M. Zacharias and P. M. Fauchett, Appl. Phys. Lett. 71, 380 (1997). 10.1063/1.119543
- (1997) Appl. Phys. Lett. , vol.71 , pp. 380
- Zacharias, M.¹ Fauchett, P.M.²

4
- 0001133378
- 10.1063/1.370901
- W. K. Choi, V. Ng, S. P. Ng, H. H. Thio, Z. X. Shen, and W. S. Li, J. Appl. Phys. 86, 1398 (1999). 10.1063/1.370901
- (1999) J. Appl. Phys. , vol.86 , pp. 1398
- Choi, W.K.¹ Ng, V.² Ng, S.P.³ Thio, H.H.⁴ Shen, Z.X.⁵ Li, W.S.⁶

5
- 7044245784
- 10.1063/1.1793348
- E. W. H. Kan, W. K. Chim, C. H. Lee, W. K. Choi, and T. H. Ng, Appl. Phys. Lett. 85, 2349 (2004). 10.1063/1.1793348
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2349
- Kan, E.W.H.¹ Chim, W.K.² Lee, C.H.³ Choi, W.K.⁴ Ng, T.H.⁵

6
- 33744810093
- Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories
- DOI 10.1116/1.2198852
- P. Punchaipetch, K. Ichikawa, Y. Uraoka, T. Fuyuki, A. Tomyo, E. Takahashi, and T. Hayashi, J. Vac. Sci. Technol. B 24, 1271 (2006). 10.1116/1.2198852 (Pubitemid 43838776)
- (2006) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.24 , Issue.3 , pp. 1271-1277
- Punchaipetch, P.¹ Ichikawa, K.² Uraoka, Y.³ Fuyuki, T.⁴ Tomyo, A.⁵ Takahashi, E.⁶ Hayashi, T.⁷

7
- 0000108790
- 10.1063/1.117421
- S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69, 1232 (1996). 10.1063/1.117421
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1232
- Tiwari, S.¹ Rana, F.² Chan, K.³ Shi, L.⁴ Hanafi, H.⁵

8
- 0037463333
- 10.1063/1.1555709
- A. Kanjilal, J. Lundsgaard Hansen, P. Gaiduk, A. Nylandsted Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Skarlatos, and D. Tsoukalas, Appl. Phys. Lett. 82, 1212 (2003). 10.1063/1.1555709
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1212
- Kanjilal, A.¹ Lundsgaard Hansen, J.² Gaiduk, P.³ Nylandsted Larsen, A.⁴ Cherkashin, N.⁵ Claverie, A.⁶ Normand, P.⁷ Kapelanakis, E.⁸ Skarlatos, D.⁹ Tsoukalas, D.¹⁰

9
- 26144466975
- 10.1103/PhysRevB.46.15578
- T. Takagahara and K. Takeda, Phys. Rev. B 46, 578 (1992). 10.1103/PhysRevB.46.15578
- (1992) Phys. Rev. B , vol.46 , pp. 578
- Takagahara, T.¹ Takeda, K.²

10
- 35949006801
- 10.1103/PhysRevB.51.1658
- Y. Maeda, Phys. Rev. B 51, 1658 (1994). 10.1103/PhysRevB.51.1658
- (1994) Phys. Rev. B , vol.51 , pp. 1658
- Maeda, Y.¹

11
- 0030083789
- Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition
- DOI 10.1063/1.115964, PII S0003695196002094
- A. K. Dutta, Appl. Phys. Lett. 68, 1189 (1996). 10.1063/1.115964 (Pubitemid 126684125)
- (1996) Applied Physics Letters , vol.68 , Issue.9 , pp. 1189-1191
- Dutta, A.K.¹

12
- 21544432504
- 10.1063/1.357031
- T. Shimizu-Iwayama, K. Fujita, S. Nakao, K. Saitoh, T. Fujita, and N. Itoh, J. Appl. Phys. 75, 7779 (1994). 10.1063/1.357031
- (1994) J. Appl. Phys. , vol.75 , pp. 7779
- Shimizu-Iwayama, T.¹ Fujita, K.² Nakao, S.³ Saitoh, K.⁴ Fujita, T.⁵ Itoh, N.⁶

13
- 58149263374
- 10.1088/0957-4484/19/45/455611
- F. Gao, M. A. Green, G. Conibeer, E. Cho, Y. Huang, I. Wurfl, and C. Flynn, Nanotechnology 19, 455611 (2008). 10.1088/0957-4484/19/45/455611
- (2008) Nanotechnology , vol.19 , pp. 455611
- Gao, F.¹ Green, M.A.² Conibeer, G.³ Cho, E.⁴ Huang, Y.⁵ Wurfl, I.⁶ Flynn, C.⁷

14
- 0000248720
- 10.1063/1.117986
- V. Cracium, C. B. Leborgne, E. J. Nicholls, and I. W. Boyd, Appl. Phys. Lett. 69 1506 (1996). 10.1063/1.117986
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1506
- Cracium, V.¹ Leborgne, C.B.² Nicholls, E.J.³ Boyd, I.W.⁴

15
- 0004881414
- 10.1063/1.119236
- M. Mulato, D. Toet, G. Aichmayr, and P. V. Santos, Appl. Phys. Lett. 70, 3570 (1997). 10.1063/1.119236
- (1997) Appl. Phys. Lett. , vol.70 , pp. 3570
- Mulato, M.¹ Toet, D.² Aichmayr, G.³ Santos, P.V.⁴

16
- 0000362194
- 10.1063/1.363815
- J. Siegel, J. Solis, C. N. Afonso, and C. Garcia, J. Appl. Phys. 80, 6677 (1996). 10.1063/1.363815
- (1996) J. Appl. Phys. , vol.80 , pp. 6677
- Siegel, J.¹ Solis, J.² Afonso, C.N.³ Garcia, C.⁴

17
- 4444237407
- 10.1063/1.1782267
- J. M. Shieh, Z. H. Chen, B. T. Dai, Y. C. Wang, A. Zaitsev, and C. L. Pan, Appl. Phys. Lett. 85 1232 (2004). 10.1063/1.1782267
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1232
- Shieh, J.M.¹ Chen, Z.H.² Dai, B.T.³ Wang, Y.C.⁴ Zaitsev, A.⁵ Pan, C.L.⁶

18
- 79960197089
- 10.1063/1.3601356
- O. Salihoglu, U. Kurum, G. Yaglioglu, A. Elmali, and A. Aydinli, J. Appl. Phys. 109, 123108 (2011). 10.1063/1.3601356
- (2011) J. Appl. Phys. , vol.109 , pp. 123108
- Salihoglu, O.¹ Kurum, U.² Yaglioglu, G.³ Elmali, A.⁴ Aydinli, A.⁵

19
- 42749107628
- 10.1103/PhysRevLett.87.225701
- K. Sokolowski-Tinten, C. Blome, C. Dietrich, A. Tarasevitch, M. Horn von Hoegen, D. von der Linde, A. Cavalleri, J. Squier, and M. Kammler, Phys. Rev. Lett. 87, 225701 (2001). 10.1103/PhysRevLett.87.225701
- (2001) Phys. Rev. Lett. , vol.87 , pp. 225701
- Sokolowski-Tinten, K.¹ Blome, C.² Dietrich, C.³ Tarasevitch, A.⁴ Horn Von Hoegen, M.⁵ Von Der Linde, D.⁶ Cavalleri, A.⁷ Squier, J.⁸ Kammler, M.⁹

20
- 0036979673
- 10.1038/nmat767
- S. K. Sundaram and E. Mazur, Nature Mater. 1, 217 (2002). 10.1038/nmat767
- (2002) Nature Mater. , vol.1 , pp. 217
- Sundaram, S.K.¹ Mazur, E.²

21
- 0012444814
- 10.1088/0022-3735/5/3/015
- R. Skinner and R. E. Whitcher, J. Phys. E 5, 237 (1972). 10.1088/0022-3735/5/3/015
- (1972) J. Phys. e , vol.5 , pp. 237
- Skinner, R.¹ Whitcher, R.E.²

22
- 0142057580
- 10.1063/1.1603962
- J. B. Lonzaga, S. M. Avanesyan, S. C. Langford, and J. T. Dickinson, J. Appl. Phys. 94, 4332 (2003). 10.1063/1.1603962
- (2003) J. Appl. Phys. , vol.94 , pp. 4332
- Lonzaga, J.B.¹ Avanesyan, S.M.² Langford, S.C.³ Dickinson, J.T.⁴

23
- 0002822279
- Single-pulse ultraviolet laser-induced surface modification and ablation of polyimide
- DOI 10.1063/1.122021, PII S0003695198014326
- K. Piglmayer, E. Arenholz, C. Ortwein, N. Arnold, and D. Bauerle, Appl. Phys. Lett. 73, 847 (1998). 10.1063/1.122021 (Pubitemid 128673937)
- (1998) Applied Physics Letters , vol.73 , Issue.6 , pp. 847-849
- Piglmayer, K.¹ Arenholz, E.² Ortwein, C.³ Arnold, N.⁴ Bauerle, D.⁵

24
- 0031206671
- 10.1063/1.119677
- E. N. Glezer and E. Mazur, Appl. Phys. Lett. 71, 882 (1997). 10.1063/1.119677
- (1997) Appl. Phys. Lett. , vol.71 , pp. 882
- Glezer, E.N.¹ Mazur, E.²

25
- 0000134647
- 10.1103/PhysRevB.61.11437
- A. Kaiser, B. Rethfeld, M. Vicanek, and G. Simon, Phys. Rev. B 61, 11437 (2000). 10.1103/PhysRevB.61.11437
- (2000) Phys. Rev. B , vol.61 , pp. 11437
- Kaiser, A.¹ Rethfeld, B.² Vicanek, M.³ Simon, G.⁴

26
- 35949017257
- 10.1103/PhysRevB.26.5366
- Z. Guosheng, P. M. Fauchet, and A. E. Siegman, Phys. Rev. B 26, 5366 (1982). 10.1103/PhysRevB.26.5366
- (1982) Phys. Rev. B , vol.26 , pp. 5366
- Guosheng, Z.¹ Fauchet, P.M.² Siegman, A.E.³

27
- 58149513251
- 10.1063/1.3052693
- M. S. Rogers, C. P. Grigoropoulos, A. M. Minor, and S. S. Mao, Appl. Phys. Lett. 94, 011111 (2009). 10.1063/1.3052693
- (2009) Appl. Phys. Lett. , vol.94 , pp. 011111
- Rogers, M.S.¹ Grigoropoulos, C.P.² Minor, A.M.³ Mao, S.S.⁴

28
- 33845229978
- 10.1016/j.mss2006.08.073
- A. Dana, S. Tokay, and A. Aydinli, Mat. Sci. Semicond. Process 9, 848 (2006). 10.1016/j.mssp.2006.08.073
- (2006) Mat. Sci. Semicond. Process , vol.9 , pp. 848
- Dana, A.¹ Tokay, S.² Aydinli, A.³

29
- 0004881414
- 10.1063/1.119236
- M. Mulato, D. Toet, G. Aichmayr, P. V. Santos, and I. Chambouleyron, Appl. Phys. Lett. 70, 3570 (1997). 10.1063/1.119236
- (1997) Appl. Phys. Lett. , vol.70 , pp. 3570
- Mulato, M.¹ Toet, D.² Aichmayr, G.³ Santos, P.V.⁴ Chambouleyron, I.⁵

30
- 0000329135
- 10.1103/PhysRevB.43.2299
- H. Tang and I. P. Herman, Phys. Rev. B 43, 2299 (1991). 10.1103/PhysRevB.43.2299
- (1991) Phys. Rev. B , vol.43 , pp. 2299
- Tang, H.¹ Herman, I.P.²

31
- 0242413056
- 10.1063/1.1617361
- A. Wellner, V. Paillard, C. Bonafos, H. Coffin, A. Claverie, B. Schmidt, and K. H. Heinig, J. Appl. Phys. 94, 5639 (2003). 10.1063/1.1617361
- (2003) J. Appl. Phys. , vol.94 , pp. 5639
- Wellner, A.¹ Paillard, V.² Bonafos, C.³ Coffin, H.⁴ Claverie, A.⁵ Schmidt, B.⁶ Heinig, K.H.⁷

32
- 70349755621
- 10.1016/j.ssc.2009.08.036
- S. K. Gupta and P. K. Jha, Solid State Commun. 149, 1989 (2009). 10.1016/j.ssc.2009.08.036
- (2009) Solid State Commun. , vol.149 , pp. 1989
- Gupta, S.K.¹ Jha, P.K.²

33
- 1642454703
- 10.1143/JJAP.42.6742
- K. Kitahara, K. Ohnishi, Y. Katoh, R. Yamazaki, and T. Kurosawa, Jpn. J. Appl. Phys. 42, 6742 (2003). 10.1143/JJAP.42.6742
- (2003) Jpn. J. Appl. Phys. , vol.42 , pp. 6742
- Kitahara, K.¹ Ohnishi, K.² Katoh, Y.³ Yamazaki, R.⁴ Kurosawa, T.⁵

34
- 13444261162
- 2 matrix
- DOI 10.1016/j.optmat.2004.08.041, PII S092534670400254X, Si-Based Photonics: Towards True Monolithic Integration
- S.K. Ray and K. Das, Opt. Mater. 27, 948 (2005). 10.1016/j.optmat.2004. 08.041 (Pubitemid 40211960)
- (2005) Optical Materials , vol.27 , Issue.5 , pp. 948-952
- Ray, S.K.¹ Das, K.²

35
- 0001752782
- Microstructural and photoluminescence studies of germanium nanocrystals in amorphous silicon oxide films
- DOI 10.1063/1.1342026
- W. K. Choi, Y. W. Ho, S. P. Ng, and v. Ng, J. Appl. Phys. 89, 2168 (2001). 10.1063/1.1342026 (Pubitemid 33661988)
- (2001) Journal of Applied Physics , vol.89 , Issue.4 , pp. 2168-2172
- Choi, W.K.¹ Ho, Y.W.² Ng, S.P.³ Ng, V.⁴

36
- 0030083789
- Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition
- DOI 10.1063/1.115964, PII S0003695196002094
- A. K. Dutta, Appl. Phys. Lett. 68, 1189 (1996). 10.1063/1.115964 (Pubitemid 126684125)
- (1996) Applied Physics Letters , vol.68 , Issue.9 , pp. 1189-1191
- Dutta, A.K.¹

37
- 21544445254
- The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals
- DOI 10.1063/1.115838, PII S0003695196026186
- K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 68, 2511 (1996). 10.1063/1.115838 (Pubitemid 126683959)
- (1996) Applied Physics Letters , vol.68 , Issue.18 , pp. 2511-2513
- Min, K.S.¹ Shcheglov, K.V.² Yang, C.M.³ Atwater, H.A.⁴ Brongersma, M.L.⁵ Polman, A.⁶

38
- 59949098761
- 10.1116/1.3025844
- S. T. Chang and S. H. Liao, J. Vac. Sci. Technol. B 27, 535 (2009). 10.1116/1.3025844
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 535
- Chang, S.T.¹ Liao, S.H.²

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