Experimental investigation of tunnel oxide thickness on charge transport through Si nanocrystal dot floating gate memories

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1271-1277

  Punchaipetch, Prakaipetch ^a   Ichikawa, Kazunori ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Tomyo, Atsushi ^b   Takahashi, Eiji ^b   Hayashi, Tsukasa ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRONIC PROPERTIES; ELECTRONS; SEMICONDUCTOR MATERIALS; SILICON;

CHARGE TRANSPORT; GATE MEMORIES; TUNNEL OXIDE THICKNESS;

NANOSTRUCTURED MATERIALS;

EID: 33744810093     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2198852     Document Type: Article

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